Image sensor device having black pixel region
An image sensor device includes an optical black pixel region and an active pixel region. The image sensor device includes a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon, a pixel metal wire layer including a transparent material on the light receiving unit and including a plurality of metal wires therein, and a filter unit on the pixel metal wire layer. The filter unit includes a plurality of filters that are configured to transmit light according to a wavelength thereof. The filters of the filter unit in the optical black pixel region of the image sensor device have a single color. The image sensor device further includes a light blocking layer in the optical black pixel region between the filter unit and the light receiving unit. The light blocking layer is configured to block light that passes through the filter unit.
1. An image sensor device including an optical black pixel region and an active pixel region, the device comprising:
a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon;
a pixel metal wire layer including a transparent material on the light receiving unit and including a plurality of metal wires therein;
a filter unit on the pixel metal wire layer, wherein the filter unit comprises a plurality of filters that are configured to transmit light according to a wavelength thereof, the filter unit including blue color filters in the optical black pixel region of the image sensor device; and
a light blocking layer in the optical black pixel region between the filter unit and the light receiving unit, wherein the light blocking layer is configured to block light that has passed through the filter unit;
wherein the light blocking layer in the optical black pixel region comprises silicon and has an absorption and/or reflection property with respect to light that has passed through the filter unit.
2. The image sensor device of claim 1 , wherein the light blocking layer in the optical black pixel region comprises amorphous silicon (a-Si) and/or crystalline silicon (Si).
3. An image sensor device including an optical black pixel region and an active pixel region, the device comprising:
a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon;
a pixel metal wire layer including a transparent material on the light receiving unit and including a plurality of metal wires therein;
a filter unit on the pixel metal wire layer, wherein the filter unit comprises a plurality of filters that are configured to transmit light according to a wavelength thereof, wherein the filters of the filter unit in the optical black pixel region of the image sensor device comprise filters of a single color; and
a light blocking layer in the optical black pixel region between the filter unit and the light receiving unit, wherein the light blocking layer is configured to block light that has passed through the filter unit;
wherein the filters in the optical black pixel region comprise blue color filters, and wherein the light blocking layer in the optical black pixel region comprises amorphous silicon (a-Si) and/or crystalline silicon (Si) and has an absorption and/or reflection property with respect to light that has passed through the filter unit.
4. The image sensor device of claim 3 , wherein the light blocking layer comprises a film having a thickness and material composition that permits a hydrogen passivation process to be performed on the portion of the pixel metal wire layer under the light blocking layer.
5. The image sensor device of claim 3 , wherein the light blocking layer comprises a combination of organic films that is configured to absorb and/or reflect light that has passed through the filter unit.
6. The image sensor device of claim 3 , wherein the light blocking layer comprises amorphous silicon having a thickness greater than a penetration depth of blue light thereinto.
7. The image sensor device of claim 3 , wherein the light blocking layer comprises amorphous silicon having a thickness of from about 0.01 μm to about 0.5 μm.
8. The image sensor device of claim 3 , wherein the metal wires in the pixel metal wire layer have a similar structure in the optical black pixel region as in the active pixel region.
9. The image sensor device of claim 3 , wherein the light blocking layer comprises a non-metallic material.
10. The image sensor device of claim 3 , wherein the pixel metal wire layer comprises metal wires having a periodically repeating pattern in a transparent material layer.
11. The image sensor device of claim 3 , wherein the filters in the filter unit are between transparent upper and lower resin layers, and the filters of the filter unit in the active pixel region include regularly arranged red, green, and blue color filters.
12. The image sensor device of claim 3 , further comprising a plurality of lenses configured to focus light into the filter unit.