Contact structure for FinFET device
In accordance with an embodiment, a FinFET device includes: one or more fins, a dummy fin, a gate line, a gate contact landing pad, and a gate contact element. Each of the fins extends in a first direction above a substrate. The dummy fin extends in parallel with the fins in the first direction above the substrate. The gate line extends in a second direction above the substrate, and partially wraps around the fins. The gate contact landing pad is positioned adjacent to or above the dummy fin and electrically coupled to the gate line. The gate contact element is electrically coupled to the gate contact landing pad and is positioned to the top surface thereof.
1. A FinFET device, comprising:
at least one fin, extending in a first direction and supported by a substrate;
a dummy fin, extending in the first direction and supported by the substrate;
a gate line, extending in a second direction and supported by the substrate and partially wrapping around the fin;
a gate contact landing pad electrically coupled to the gate line, supported by the substrate and partially wrapping around the dummy fin; and
a gate contact element electrically coupled to the gate contact landing pad, supported by a top surface thereof.
2. The FinFET device of claim 1 , wherein the gate contact landing pad wraps around a top surface and at least one side surface of the dummy fin.
3. The FinFET device of claim 1 , wherein the gate contact landing pad is made of one or more metals selected from the group of metals consisting of tungsten, copper, silver, gold, aluminum, and their alloys.
4. The FinFET device of claim 1 , wherein the gate contact element is an opening filled with conductive material, the conductive material is made of one or more metals selected from the group of metals consisting of tungsten, copper, silver, gold, aluminum, and their alloys.
5. The FinFET device of claim 1 , wherein the fin and the dummy fin are made of one or more doped semiconductor materials selected from a group of semiconductor materials consisting of silicon, germanium, silicon carbide, gallium arsenate, and indium phosphate.
6. A FinFET device, comprising:
at least one fin, extending in a first direction and supported by a substrate;
a dummy fin, extending in the first direction and supported by the substrate;
a conductive line, extending in a second direction and supported by the substrate and partially wrapping around the fin;
a conductive line contact landing pad electrically coupled to the conductive line, supported by the substrate and partially wrapping around the dummy fin; and
a conductive line contact element, supported by a top surface of the conductive line contact landing pad, and electrically coupled to the conductive line contact landing pad.
7. The FinFET device of claim 6 , wherein the conductive line is made of one or more metals selected from the group of metals consisting of tungsten, copper, silver, gold, aluminum, and their alloys.
8. The FinFET device of claim 6 , wherein the space between the substrate, the at least one fin, the dummy fin, the conductive line, and the conductive line contact landing pad is filled with borophosphosilicate glass (BPSG).
9. The FinFET device of claim 6 , wherein each of the at least one fin and the dummy fin are substantially in the shape of a rectangle.
10. The FinFET device of claim 6 , wherein the height to width ratio of each of the at least one fin and the dummy fin is substantially 3:1 to 5:1.