IP Library › Granted Patent US 7,799,620
Granted Patent B2
US 7,799,620 · App. 12/078,093 · Granted Sep 21, 2010

Manufacturing method of semiconductor device, manufacturing method of display device, semiconductor device, display device, and electronic device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,799,620
App. No.
12/078,093
Granted
Sep 21, 2010
Kind
B2
Abstract

A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate; forming a second insulating layer over part of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer; bonding the single-crystal semiconductor substrate to a region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween; and forming a single-crystal semiconductor layer over the insulating substrate by separating the single-crystal semiconductor substrate at the ion-doped layer which acts as a separation surface so that the ion-doped layer is separated from the insulating substrate.

Claims (60)

1. A method for manufacturing a semiconductor device comprising:

forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate;

forming a second insulating layer over a first region of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer;

bonding the single-crystal semiconductor substrate to a second region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween, after forming the non-single-crystal semiconductor layer;

forming a single-crystal semiconductor layer over the insulating substrate by separating a portion of the single-crystal semiconductor substrate at the ion-doped layer from the insulating substrate; and

patterning the non-single-crystal semiconductor layer and the single-crystal semiconductor layer at the same time.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein a circuit of a display portion is formed with the use of the non-single-crystal semiconductor layer in the first region, and wherein a driver circuit portion is formed with the use of the single-crystal semiconductor layer in the second region.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein the first insulating layer is formed over the single-crystal semiconductor substrate before or after the ion-doped layer is formed at the predetermined depth from the surface of the single-crystal semiconductor substrate.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein at least one of the first insulating layer and the second insulating layer is formed in a stacked-layer structure.

5. The method for manufacturing a semiconductor device according to claim 4 , wherein a portion of the stacked-layer structure of the first insulating layer that is in contact with the single-crystal semiconductor layer is formed using the same material as a portion of the stacked-layer structure of the second insulating layer that is in contact with the non-single-crystal semiconductor layer.

6. The method for manufacturing a semiconductor device according to claim 4 , wherein a silicon oxynitride layer is formed as a portion of the stacked-layer structure of the first insulating layer that is in contact with the single-crystal semiconductor layer and a portion of the stacked-layer structure of the second insulating layer that is in contact with the non-single-crystal semiconductor layer, and a silicon nitride oxide layer is formed so as to be in contact with the silicon oxynitride layer.

7. The method for manufacturing a semiconductor device according to claim 4 , wherein a portion of the stacked-layer structure of the first insulating layer that is in contact with the insulating substrate is a silicon oxide layer.

8. The method for manufacturing a semiconductor device according to claim 1 , wherein a thickness of the single-crystal semiconductor layer is made smaller than a thickness of the non-single-crystal semiconductor layer.

9. The method for manufacturing a semiconductor device according to claim 1 , wherein a sum of a thickness of the single-crystal semiconductor layer and a thickness of the first insulating layer is made equivalent to a sum of a thickness of the non-single-crystal semiconductor layer and a thickness of the second insulating layer.

10. The method for manufacturing a semiconductor device according to claim 1 , wherein characteristics of the single-crystal semiconductor layer and the non-single-crystal semiconductor layer are improved by performing laser light irradiation after the single-crystal semiconductor layer is formed over the insulating substrate.

11. A method for manufacturing a display device comprising:

forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate;

forming a second insulating layer over a first region of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer;

bonding the single-crystal semiconductor substrate to a second region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween, after forming the non-single-crystal semiconductor layer;

forming a single-crystal semiconductor layer over the insulating substrate by separating a portion of the single-crystal semiconductor substrate with the ion-doped layer from the insulating substrate;

patterning the non-single-crystal semiconductor layer and the single-crystal semiconductor layer at the same time.

12. The method for manufacturing a display device according to claim 11 , wherein a circuit of a display portion is formed with the use of the non-single-crystal semiconductor layer in the first region, and wherein a driver circuit portion is formed with the use of the single-crystal semiconductor layer in the second region.

13. The method for manufacturing a display device according to claim 11 , wherein the first insulating layer is formed over the single-crystal semiconductor substrate before or after the ion-doped layer is formed at the predetermined depth from the surface of the single-crystal semiconductor substrate.

14. The method for manufacturing a display device according to claim 11 , wherein at least one of the first insulating layer and the second insulating layer is formed in a stacked-layer structure.

15. The method for manufacturing a display device according to claim 14 , wherein a portion of the stacked-layer structure of the first insulating layer that is in contact with the single-crystal semiconductor layer is formed using the same material as a portion of the stacked-layer structure of the second insulating layer that is in contact with the non-single-crystal semiconductor layer.

16. The method for manufacturing a display device according to claim 14 , wherein a silicon oxynitride layer is formed as a portion of the stacked-layer structure of the first insulating layer which is in contact with the single-crystal semiconductor layer and a portion of the stacked-layer structure of the second insulating layer which is in contact with the non-single-crystal semiconductor layer, and a silicon nitride oxide layer is formed so as to be in contact with the silicon oxynitride layer.

17. The method for manufacturing a display device according to claim 14 , wherein a portion of the stacked-layer structure of the first insulating layer that is in contact with the insulating substrate is a silicon oxide layer.

18. The method for manufacturing a display device according to claim 11 , wherein a thickness of the single-crystal semiconductor layer is made smaller than a thickness of the non-single-crystal semiconductor layer.

19. The method for manufacturing a display device according to claim 11 , wherein a sum of a thickness of the single-crystal semiconductor layer and a thickness of the first insulating layer is made equivalent to a sum of a thickness of the non-single-crystal semiconductor layer and a thickness of the second insulating layer.

20. The method for manufacturing a display device according to claim 11 , wherein characteristics of the single-crystal semiconductor layer and the non-single-crystal semiconductor layer are improved by performing laser light irradiation after the single-crystal semiconductor layer is formed over the insulating substrate.

21. A method for manufacturing a semiconductor device comprising:

forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate;

forming a second insulating layer over a first region of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer;

bonding the single-crystal semiconductor substrate to a second region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween, after forming the non-single-crystal semiconductor layer;

forming a single-crystal semiconductor layer over the insulating substrate by separating a portion of the single-crystal semiconductor substrate at the ion-doped layer from the insulating substrate; and

patterning the non-single-crystal semiconductor layer and the single-crystal semiconductor layer.

22. The method for manufacturing a semiconductor device according to claim 21 , wherein a circuit of a display portion is formed with the use of the non-single-crystal semiconductor layer in the first region, and wherein a driver circuit portion is formed with the use of the single-crystal semiconductor layer in the second region.

23. The method for manufacturing a semiconductor device according to claim 21 , wherein the first insulating layer is formed over the single-crystal semiconductor substrate before or after the ion-doped layer is formed at the predetermined depth from the surface of the single-crystal semiconductor substrate.

24. The method for manufacturing a semiconductor device according to claim 21 , wherein at least one of the first insulating layer and the second insulating layer is formed in a stacked-layer structure.

25. The method for manufacturing a semiconductor device according to claim 24 , wherein a portion of the stacked-layer structure of the first insulating layer that is in contact with the single-crystal semiconductor layer is formed using the same material as a portion of the stacked-layer structure of the second insulating layer that is in contact with the non-single-crystal semiconductor layer.

26. The method for manufacturing a semiconductor device according to claim 24 , wherein a silicon oxynitride layer is formed as a portion of the stacked-layer structure of the first insulating layer that is in contact with the single-crystal semiconductor layer and a portion of the stacked-layer structure of the second insulating layer that is in contact with the non-single-crystal semiconductor layer, and a silicon nitride oxide layer is formed so as to be in contact with the silicon oxynitride layer.

27. The method for manufacturing a semiconductor device according to claim 24 , wherein a portion of the stacked-layer structure of the first insulating layer that is in contact with the insulating substrate is a silicon oxide layer.

28. The method for manufacturing a semiconductor device according to claim 21 , wherein a thickness of the single-crystal semiconductor layer is made smaller than a thickness of the non-single-crystal semiconductor layer.

29. The method for manufacturing a semiconductor device according to claim 21 , wherein a sum of a thickness of the single-crystal semiconductor layer and a thickness of the first insulating layer is made equivalent to a sum of a thickness of the non-single-crystal semiconductor layer and a thickness of the second insulating layer.

30. The method for manufacturing a semiconductor device according to claim 21 , wherein characteristics of the single-crystal semiconductor layer and the non-single-crystal semiconductor layer are improved by performing laser light irradiation after the single-crystal semiconductor layer is formed over the insulating substrate.

31. A method for manufacturing a display device comprising:

forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate;

forming a second insulating layer over a first region of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer;

bonding the single-crystal semiconductor substrate to a second region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween, after forming the non-single-crystal semiconductor layer;

forming a single-crystal semiconductor layer over the insulating substrate by separating a portion of the single-crystal semiconductor substrate with the ion-doped layer from the insulating substrate;

patterning the non-single-crystal semiconductor layer and the single-crystal semiconductor layer.

32. The method for manufacturing a display device according to claim 31 , wherein a circuit of a display portion is formed with the use of the non-single-crystal semiconductor layer in the first region, and wherein a driver circuit portion is formed with the use of the single-crystal semiconductor layer in the second region.

33. The method for manufacturing a display device according to claim 31 , wherein the first insulating layer is formed over the single-crystal semiconductor substrate before or after the ion-doped layer is formed at the predetermined depth from the surface of the single-crystal semiconductor substrate.

34. The method for manufacturing a display device according to claim 31 , wherein at least one of the first insulating layer and the second insulating layer is formed in a stacked-layer structure.

35. The method for manufacturing a display device according to claim 34 , wherein a portion of the stacked-layer structure of the first insulating layer that is in contact with the single-crystal semiconductor layer is formed using the same material as a portion of the stacked-layer structure of the second insulating layer that is in contact with the non-single-crystal semiconductor layer.

36. The method for manufacturing a display device according to claim 34 , wherein a silicon oxynitride layer is formed as a portion of the stacked-layer structure of the first insulating layer which is in contact with the single-crystal semiconductor layer and a portion of the stacked-layer structure of the second insulating layer which is in contact with the non-single-crystal semiconductor layer, and a silicon nitride oxide layer is formed so as to be in contact with the silicon oxynitride layer.

37. The method for manufacturing a display device according to claim 34 , wherein a portion of the stacked-layer structure of the first insulating layer that is in contact with the insulating substrate is a silicon oxide layer.

38. The method for manufacturing a display device according to claim 31 , wherein a thickness of the single-crystal semiconductor layer is made smaller than a thickness of the non-single-crystal semiconductor layer.

39. The method for manufacturing a display device according to claim 31 , wherein a sum of a thickness of the single-crystal semiconductor layer and a thickness of the first insulating layer is made equivalent to a sum of a thickness of the non-single-crystal semiconductor layer and a thickness of the second insulating layer.

40. The method for manufacturing a display device according to claim 31 , wherein characteristics of the single-crystal semiconductor layer and the non-single-crystal semiconductor layer are improved by performing laser light irradiation after the single-crystal semiconductor layer is formed over the insulating substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 27, 2008
From: HONDA, TATSUYA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 020758/0589 →
Priority Claims (1)
JP 2007-131590 · May 17, 2007 · national
Continuity (1)
Related Publication 20090039349A1 · Feb 12, 2009