Lateral MOSFET and manufacturing method thereof
View Patent ↗A lateral MOSFET according to the present invention has a trench gate structure having a cross sectional shape spreading toward an open end. The cross sectional shape is T-shape. The T-shaped cross section has a dimensional ratio of a width of a lower trench having a narrow width to a width of an upper trench having a wide width of 1:3, and a dimensional ratio of a depth of the lower trench to a depth of the upper trench of 1:1, the lower trench width having a same central axis as the upper trench width.
1. A lateral MOSFET comprising:
a semiconductor substrate that has a main surface;
a gate electrode that is buried in a trench that is formed at the main surface of the semiconductor substrate; and
source and drain impurities regions that are formed below the main surface of the semiconductor, the source and drain regions sandwiching the trench therebetween,
wherein the trench includes at least two step portions in its depth direction, the two step portions being dimensioned such that the thicknesses of horizontally extending and vertically extending portions of said source and drain impurities regions are substantially same.
2. The lateral MOSFET according to claim 1 , wherein a cross sectional shape of the trench is T-shape.
3. The lateral MOSFET according to claim 2 , wherein the T-shaped cross section has a dimensional ratio of a width of a lower trench having a narrow width to a width of an upper trench having a wide width of 1:3, and a dimensional ratio of a depth of the lower trench to a depth of the upper trench of 1:1, the lower trench width having a same central axis as the upper trench width.
4. The lateral MOSFET according to claim 3 , wherein the width of the lower trench is substantially same as the depth of the lower trench.
5. The lateral MOSFET according to claim 1 , wherein the lateral MOSFET is formed in an SOI substrate.
6. A lateral MOSFET having a trench gate structure having a cross sectional shape spreading toward an open end, wherein the cross sectional shape below the open end is T-shape, and
the T-shaped cross section has a dimensional ratio of a width of a lower trench having a narrow width to a width of an upper trench having a wide width of 1:3, and a dimensional ratio of a depth of the lower trench to a depth of the upper trench of 1:1, the lower trench width having a same central axis as the upper trench width, whereby thicknesses of horizontally extending and vertically extending portions of said source and drain impurities regions are substantially same.
7. The lateral MOSFET according to claim 6 , wherein the width of the lower trench is substantially same as the depth of the lower trench.