Composition for photoresist stripping solution and process of photoresist stripping
The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring materials and interlayer insulating film materials, as well as a process of stripping of photoresists and damaged photoresist layers. The composition for photoresist stripping solution which contains at least one of acetylene alcohol compounds and organic sulfonic acid compounds, and at least one of polyvalent alcohols and their derivatives is used.
1. A composition for photoresist stripping solution containing at least one of acetylene alcohol compounds and methanesulfonic acid, at least one of polyvalent alcohols and their derivatives, and optionally one or more fluorine compounds, wherein the concentration of the fluorine compounds is no more than 0.1 mass %.
2. The composition for photoresist stripping solution according to claim 1 , further containing one or more quaternary ammonium hydroxide salts.
3. The composition for photoresist stripping solution according to claim 1 , wherein the acetylene alcohol compound is 2-butyne-1,4-diol.
4. The composition for photoresist stripping solution according to claim 1 , wherein the fluorine compound is ammonium fluoride.
5. The composition for photoresist stripping solution according to claim 1 , wherein a water content is 10 mass % or less relative to the composition.
6. The composition for photoresist stripping solution according to claim 1 , wherein the composition is used for the fabrication of semiconductor circuit devices having copper as a wiring material or a low-dielectric film as an interlayer insulating film.
7. A process of photoresist stripping, wherein the composition for photoresist stripping solution according to claim 1 is used.
8. A process of photoresist stripping comprising a treatment using a first solution which contains at least one of acetylene alcohol compounds and methanesulfonic acid, and a treatment using a second solution which contains at least one of polyvalent alcohols and their derivatives.
9. The process of photoresist stripping according to claim 8 , wherein the second solution contains one or more fluorine compounds, wherein the concentration of the fluorine compounds is no more than 0.1 mass %, and one or more quaternary ammonium hydroxide salts.
10. The process of photoresist stripping according to claim 8 , wherein the process is used for the fabrication of semiconductor circuit devices having copper as a wiring material or a low-dielectric film as an interlayer insulating film.
11. The composition for photoresist stripping solution according to claim 1 , wherein the composition contains no fluorine compound.