Semiconductor device and method for manufacturing the same

1. A semiconductor device comprising:

a protection target element formed on a semiconductor substrate and includes a protection target element electrode;

a substrate connecting part including a substrate connecting electrode electrically connected to the semiconductor substrate; and

a fuse structure provided between the protection target element electrode and the substrate connecting electrode and includes a fuse film configured to be torn by applying a predetermined current thereto, wherein

the protection target element electrode, the substrate connecting electrode and the fuse film are formed of an integral conductive film as long as the fuse film is not torn.

2. The semiconductor device of claim 1 , wherein

the fuse film is torn and

the protection target element electrode and the substrate connecting electrode in the conductive film are insulated from each other.

3. The semiconductor device of claim 1 , further comprising

an insulating film provided between the conductive film and the semiconductor substrate.

4. The semiconductor device of claim 1 , wherein

the fuse structure includes a first disconnecting terminal and a second disconnecting terminal electrically connected to parts of the conductive film on the sides of the fuse film, respectively.

5. The semiconductor device of claim 1 , wherein

part of the semiconductor substrate connected to the substrate connecting electrode has a first conductivity and

the substrate connecting electrode has a second conductivity.

6. The semiconductor device of claim 5 , wherein

the substrate connecting part includes a first conductivity type diffusion layer formed in part of the semiconductor substrate connected to the substrate connecting electrode.

7. The semiconductor device of claim 6 , wherein

the semiconductor substrate includes a first conductive type well and

the first conductivity type diffusion layer is formed in the first conductivity type well.

8. The semiconductor device of claim 1 , wherein

the substrate connecting electrode is connected to the semiconductor substrate with the interposition of a substrate connecting insulating film having a thickness of 4 nm or less.

9. The semiconductor device of claim 1 , wherein

the protection target element is a nonvolatile memory whose characteristic varies depending on electrons or holes stored in and removed from a charge storage layer.

10. The semiconductor device of claim 1 , wherein

the fuse film has a width smaller than the width of the protection target element electrode and the width of the substrate connecting electrode.

11. The semiconductor device of claim 1 , wherein

a plurality of the conductive films are arranged in parallel at intervals,

the fuse film and the substrate connecting electrode of one conductive film are formed on one of the sides of the corresponding protection target element electrode, while the fuse film and the substrate connecting electrode of another conductive film adjacent to said conductive film are formed on the other side of the corresponding protection target element electrode and

parts of the conductive film on the sides of each fuse film have a width larger than the width of the protection target element electrode.

12. The semiconductor device of claim 1 , wherein

the conductive film is metal silicide except part thereof corresponding to the fuse film.

13. The semiconductor device of claim 1 , wherein

the conductive film includes a lower conductive film and an upper conductive film except part thereof corresponding to the fuse film and

the fuse film is made of the upper conductive film formed on a fuse insulating film.

14. The semiconductor device of claim 13 , wherein

the upper conductive film in the substrate connecting electrode is connected to the substrate.