IP Library Granted Patent US 7,825,577
Granted Patent B2
US 7,825,577 · App. 11/878,961 · Granted Nov 2, 2010

Light emitting device having a patterned substrate and the method thereof

Assignee: Epistar Corporation
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Quick Facts
Patent No.
US 7,825,577
App. No.
11/878,961
Granted
Nov 2, 2010
Kind
B2
Abstract

This disclosure provides a light-emitting device including a patterned substrate and the manufacturing method thereof. The patterned substrate has a plurality of depressions and/or extrusions for scattering light emitted from a light-emitting layer. Each of the plurality of depressions and/or extrusions comprises a top portion, a bottom portion, and a sidewall portion enclosing the top portion and the bottom portion, and at least part of the sidewall portion comprises a curve. In a preferred embodiment, the light-emitting device further comprises a rough surface formed on at least one of the top portion, the bottom portion, and the sidewall portion.

Claims (25)

1. A light-emitting device, comprising

a patterned substrate having an uneven surface composed of a plurality of depressions and/or extrusions;

a light-emitting stack overlaying the patterned substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer,

wherein at least one of the plurality of depressions and/or extrusions comprises a top portion, a bottom portion, and a sidewall portion, and at least part of the sidewall portion comprises a curve, and

wherein said top portion is substantially parallel to said bottom portion and includes a rough surface.

2. The light-emitting device according to claim 1 , wherein the sidewall portion comprises a plurality of symmetric planes.

3. The light-emitting device according to claim 1 , wherein at least one of the top portion and the bottom portion comprises a flat plane.

4. The light-emitting device according to claim 1 , wherein the substrate comprises sapphire.

5. The light-emitting device according to claim 4 , wherein the bottom portion comprises a sapphire C plane.

6. The light-emitting device according to claim 4 , wherein the sidewall portion comprises at least three symmetric sapphire R planes.

7. The light-emitting device according to claim 1 , wherein the top-view pattern of the depression and/or extrusion comprises circle or ellipse.

8. The light-emitting device according to claim 1 , wherein the light-emitting stack comprises a III-nitride compound.

9. The light-emitting device according to claim 1 , wherein the rough surface comprises a regular pattern or an irregular pattern.

10. A light-emitting device, comprising

a patterned substrate having an uneven surface composed of a plurality of depressions and/or extrusions;

a light-emitting stack overlaying the patterned substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein at least one of the plurality of depressions and/or extrusions comprises a top portion, a bottom portion, and

wherein said top portion is substantially parallel to said bottom portion and includes a rough surface.

11. The light-emitting device according to claim 10 , wherein the rough surface comprises a regular pattern or an irregular pattern.

12. The light-emitting device according to claim 10 , wherein at least part of the sidewall portion comprises a curve.

13. The light-emitting device according to claim 10 , wherein the sidewall portion comprises a plurality of symmetric planes.

14. The light-emitting device according to claim 10 , wherein the substrate comprises sapphire.

15. The light-emitting device according to claim 14 , wherein the bottom portion comprises a sapphire C plane.

16. The light-emitting device according to claim 14 , wherein the sidewall portion comprises at least three symmetric sapphire R planes.

17. The light-emitting device according to claim 10 , wherein the top-view pattern of the depression and/or extrusion comprises circle or ellipse.

18. The light-emitting device according to claim 10 , wherein the light-emitting stack comprises a III-nitride compound.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2025
From: EPISTAR CORPORATION
To: TAU CETI VENTURES LLC
Reel/Frame 073969/0972 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2007
From: HSU, TA-CHENG; YANG, YA-LAN; SU, YING-YONG; YEH, CHING-SHIAN; HUANG, CHAO-SHUN; LEE, YA-JU
To: EPISTAR CORPORATION
Reel/Frame 019686/0984 →
Priority Claims (1)
TW 95127924 A · Jul 28, 2006 · national
Continuity (1)
Related Publication 20080067916A1 · Mar 20, 2008