Method of treating surface of semiconductor substrate

1. A method of treating the surface of a semiconductor substrate comprising:

cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution;

removing the chemical solution by using pure water;

forming a water repellent protective film on the surface of the semiconductor substrate;

rinsing the semiconductor substrate by using pure water;

drying the semiconductor substrate; and

after drying the semiconductor substrate, removing the water repellant protective film.

2. The method of treating the surface of a semiconductor substrate according to claim 1 , wherein the water repellent protective film is formed by using a surfactant or a silane coupling agent.

3. The method of treating the surface of a semiconductor substrate according to claim 1 , wherein the semiconductor substrate is rinsed by using alcohol before and/or after the water repellent protective film is formed.

4. The method of treating the surface of a semiconductor substrate according to claim 3 , wherein after the semiconductor substrate is rinsed by using the alcohol, the alcohol is substituted with a thinner before the water repellent protective film is formed.

5. The method of treating the surface of a semiconductor substrate according to claim 4 , wherein the water repellent protective film is formed by using a silane coupling agent.

6. The method of treating the surface of a semiconductor substrate according to claim 4 , further comprising an ashing treatment to remove the water repellent protective film.

7. The method of treating the surface of a semiconductor substrate according to claim 1 , wherein the semiconductor substrate is dried by using a spin drying method, an evaporation drying method, or a reduced pressure drying method.

8. The method of treating the surface of a semiconductor substrate according to claim 1 , wherein the semiconductor substrate is dried in such a manner that a solvent containing isopropyl alcohol or hydrofluoroether is used to substitute the pure water left on the semiconductor substrate with the solvent, and that the solvent is then evaporated and dried.

9. The method of treating the surface of a semiconductor substrate according to claim 1 , wherein the semiconductor substrate is dried in such a manner that a solvent containing isopropyl alcohol or hydrofluoroether is used to substitute the pure water left on the semiconductor substrate with the solvent, and that a supercritical fluid is substituted for the solvent and is then gasified.