IP Library › Granted Patent US 7,838,433
Granted Patent B2
US 7,838,433 · App. 11/531,055 · Granted Nov 23, 2010

Cluster tool and method for process integration in manufacturing of a photomask

Assignee: Applied Materials, Inc.
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Quick Facts
Patent No.
US 7,838,433
App. No.
11/531,055
Granted
Nov 23, 2010
Kind
B2
Abstract

A method and apparatus for process integration in manufacture of a photomask are disclosed. In one embodiment, a cluster tool suitable for process integration in manufacture of a photomask including a vacuum transfer chamber having coupled thereto at least one hard mask deposition chamber and at least one plasma chamber configured for etching chromium. In another embodiment, a method for process integration in manufacture of a photomask includes depositing a hard mask on a substrate in a first processing chamber, depositing a resist layer on the substrate, patterning the resist layer, etching the hard mask through apertures formed in the patterned resist layer in a second chamber; and etching a chromium layer through apertures formed in the hard mask in a third chamber.

Claims (33)

1. A method for fabricating a photomask, comprising:

forming a hard mask on a chromium layer disposed on a quartz substrate;

depositing a first patterned photoresist layer on the hard mask layer;

etching the hard mask layer through the patterned photoresist;

removing the patterned photoresist layer on the hard mask layer;

etching the chromium layer to the quartz substrate using the patterned hard mask layer as an etch mask;

removing the hard mask layer;

forming a second patterned photoresist layer on the etched chromium layer;

etching a portion of the quartz substrate through the second patterned photoresist layer; and

removing the second patterned photoresist layer.

2. The method of claim 1 , wherein the forming the hard mask further comprises:

forming an attenuating layer between the hard mask layer and the chromium layer; and

etching the attentuation layer with the chromium layer to the quartz layer.

3. The method of claim 1 , wherein the removing the second patterned photoresist layer further comprises:

in-situ removing the second patterned photoresist layer while etching the portion of the quartz substrate.

4. A method for fabricating a photomask, comprising:

forming a hard mask on a chromium layer disposed on a quartz substrate in a first processing chamber in a cluster tool;

depositing a patterned photoresist layer on the hard mask layer;

etching the hard mask layer through the patterned photoresist layer in a second processing chamber in the cluster system;

in-situ removing the patterned photoresist layer on the hard mask layer in a second processing chamber;

etching the chromium layer to the quartz substrate to form a feature using the patterned hard mask layer as an etch mask in a third processing chamber in the cluster system;

in-situ removing the hard mask layer in the third processing chamber;

forming a second patterned photoresist layer on the etched chromium layer;

etching a portion of the quartz substrate through the second patterned photoresist layer; and

removing the second patterned photoresist layer.

5. A method for fabricating a photomask, comprising:

forming a hardmask on a chromium layer disposed on a quartz substrate in a first chamber of a cluster tool;

patterning a resist layer disposed on the hard mask;

etching the hard mask layer through the patterned resist layer in a second chamber of the cluster tool;

etching the chromium layer to the quartz substrate to form a feature through the hard mask layer in-situ the cluster tool;

measuring critical dimensions of the feature using a metrology tool in-situ the cluster tool; forming a second patterned photoresist layer on the etched chromium layer;

etching a portion of the quartz substrate through the second patterned photoresist layer; and

removing the second patterned photoresist layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2006
From: KUMAR, AJAY
To: APPLIED MATERIALS, INC.
Reel/Frame 018252/0414 →
Continuity (2)
Continuation 1119298900 · Jul 29, 2005
Related Publication 20070023390A1 · Feb 1, 2007