Dual band photodetector

1. A dual band photodetector comprising:

an ultraviolet (UV) region, wherein said UV region comprises a UV barrier substantially between a top contact and a middle contact, said top contact and said middle contact are each comprised of GaN and said UV barrier is comprised of AlGaN, and said top contact and said middle contact further comprise electrical connections;

an infrared (IR) region, wherein said IR region comprises a plurality of N IR barriers and N emitters with N being an integer greater than one, said IR barriers and emitters substantially between the middle contact and a bottom contact, said middle contact substantially in contact with one of said N IR barriers and said bottom contact substantially in contact with one of said N IR barriers and said bottom contact comprised of GaN and functioning as one of the emitters, each of said N IR barriers being comprised of AlGaN and further characterized by a barrier bandgap, and each emitter comprised of GaN doped with one or more of Group II, Group IV or Group VI elements to cause free carriers in the emitter to be responsive to optical signals and each said emitter characterized by an emitter bandgap that is different from that of the barrier bandgap, each of said N IR barriers is substantially adjacent to at least one of said emitters so as to form a heterojunction at each interface between the emitter and IR barrier, and said bottom contact further comprised of an electrical connection; and

a substrate substantially in contact with said bottom contact,

wherein said photodetector is configured for responsivity in at least a first and second spectral bands, said first spectral band includes light having a wavelength in the ultraviolet (UV) range and said second spectral band includes light having a wavelength in the infrared (IR) range, and

wherein said middle contact serves as a UV bottom contact for the UV region and as an IR top contact for the IR region such that photoexcited electrons from the UV region and the IR region are transported to the middle contact.

2. The dual band photodetector of claim 1 , wherein said photodetector is configured for simultaneous responsivity in the first and second spectral bands, said first spectral band includes light having a wavelength in the ultraviolet (UV) range, and said second spectral band includes Light having a wavelength in the infrared (IR) range.

3. The dual band photodetector of claim 1 , wherein each emitter in the IR region is n-doped with Si.

4. The dual band photodetector of claim 1 , wherein each emitter in the JR region is n-doped with Si to a doping concentration of 5×10 18 cm −3 .

5. The dual band photodetector of claim 4 , wherein each of said N IR barriers are comprised of Al 0.07 Ga 0.93 N.

6. The dual band photodetector of claim 5 , wherein each said IR barrier is 1000 Angstroms thick and each said emitter is 300 Angstroms thick.

7. The dual band photodetector of claim 6 , wherein said photodetector is configured for responsivity in the first spectral band to include light having a UV threshold wavelength of 360 nanometers (nm).

8. The dual band photodetector of claim 6 , wherein said photodetector is configured for responsivity in the second spectral band to include light having an IR range beginning at 5 μm up to 14 μm, beginning and ending values included.

9. The dual band photodetector of claim 6 , wherein said photodetector is configured for responsivity in the first spectral band to include light having a UV threshold wavelength of 360 nm and in the second spectral band to include light having an JR range beginning at 5 μm up to 14 μm, beginning and ending values included.

10. The dual band photodetector of claim 6 , wherein said photodetector is configured for simultaneous responsivity in the first spectral band to include light having a UV threshold wavelength of 360 nm and in the second spectral band to include light having an IR range beginning at 5 μm up to 14 μm, beginning and ending values included.