Semiconductor laser diode
An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.
1. A semiconductor laser diode comprising:
a GaN monocrystalline substrate; and
a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar plane, the Group III nitride semiconductor layered structure being formed on the substrate,
wherein the Group III nitride semiconductor layered structure comprises:
a p-type cladding layer and an n-type cladding layer;
an In-containing p-type guide layer and an In-containing n-type guide layer disposed between the p-type cladding layer and the n-type cladding layer; and
an In-containing light emitting layer disposed between the p-type guide layer and the n-type guide layer,
wherein the cladding layers are each composed of a Group III nitride semiconductor having an average Al content of less than 7%,
wherein a refractive index difference between the guide layers and the cladding layers is not less than 0.04, and
wherein the Group III nitride semiconductor layered structure has a major crystal growth plane defined by an m-plane.
2. A semiconductor laser diode as set forth in claim 1 , wherein the cladding layers are each composed of a Group III nitride semiconductor free from Al.
3. A semiconductor laser diode as set forth in claim 1 , wherein the light emitting layer has a multiple-quantum well structure including a plurality of In-containing well layers each having a thickness not greater than 100 Å.
4. A semiconductor laser diode as set forth in claim 1 , wherein the Group III nitride semiconductor layered structure is formed through crystal growth on the substrate.
5. A semiconductor laser as set forth in claim 1 , wherein the light emitting layer emits light has a wavelength of not less than about 450 nm.
6. A semiconductor laser as set forth in claim 5 , wherein the wavelength is approximately 460 nm.
7. A semiconductor layer as set forth in claim 5 , wherein the wavelength is approximately 530 nm.
8. A semiconductor laser diode comprising:
a GaN monocrystalline substrate; and
a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar plane, the Group III nitride semiconductor layered structure being formed on the substrate,
wherein the Group III nitride semiconductor layered structure comprises:
a p-type cladding layer and an n-type cladding layer;
an In-containing p-type guide layer and an In-containing n-type guide layer disposed between the p-type cladding layer and the n-type cladding layer; and
an In-containing light emitting layer disposed between the p-type guide layer and the n-type guide layer,
wherein the cladding layers are each composed of a Group III nitride semiconductor having an average Al content of less than 7%,
wherein the light emitting layer has a multiple-quantum well structure including a plurality of In-containing well layers each having a thickness not greater than 100 Å, and
wherein the Group III nitride semiconductor layered structure has a major crystal growth plane defined by an m-plane.
9. A semiconductor laser diode as set forth in claim 5 , wherein the cladding layers are each composed of a Group III nitride semiconductor free from Al.
10. A semiconductor laser diode as set forth in claim 5 , wherein the Group III nitride semiconductor layered structure is formed through crystal growth on the substrate.