Method for forming memristor material and electrode structure with memristance
Ion Implantation is used to form the memristor material and electrode structure with memristance. First, numerous electron-rich element atoms are implanted into a layer made of transition metal or non-metal. Then, a treating process (such as annealing) is proceeded to expel some electron-rich element atoms away the layer. After that, some electron-rich element vacancy rich regions are formed inside the layer, and then a memristor material is formed. Significantly, the usage of ion implantation can precisely control and flexibly adjust the distribution of the implanted atoms, and then both the amount and distribution of these depleted regions can be effectively adjusted. Hence, the quality of the memristor material is improved.
1. A method for forming a memristor material by using ion implantation, comprising:
providing a substrate having a MA layer formed thereon, wherein A is an electron-rich element and M is an element selected from a group consisting of transition metal and non-metal;
implanting a plurality of B components into said MA layer; and
treating said MA layer, such that at least a portion of AB components formed by a chemical reaction between said A and said B are expelled away from said MA layer and then a plurality of A vacancies are distributed inside said MA layer.
2. The method as claimed in claim 1 , wherein said MA layer is formed by implanting a plurality of A components into an M layer formed on said substrate.
3. The method as claimed in claim 1 , wherein said electron-rich element is selected from a group consisting of oxygen, sulfur, fluorine, chlorine, bromine, and iodine.
4. The method as claimed in claim 1 , wherein said M is selected from a group consisting of Titanium, Tantalum, Calcium, Nickel, Cerium, Vanadium, Niobium, Tungsten, Zirconium, Indium, Zinc, Tin, Platinum, ruthenium, Iridium, Silver and other transition metal.
5. The method as claimed in claim 1 , wherein said non-metal is selected from a group consisting of carbon and silicon.
6. The method as claimed in claim 1 , wherein said B is selected from a group consisting of said Hydrogen, and any element chemical reactive with said A to form volatile said AB.
7. The method as claimed in claim 1 , wherein said treating step is selected from a group consisting of heating, annealing, hot gas heating, and light projecting.
8. The method as claimed in claim 1 , wherein when there are at least two depleted regions having said A vacancies inside said MA layers, each said depleted region only partially overlapped with said MA layer and an arrangement direction of said depleted regions is selected from a group consisting of vertical direction, horizontal direction and combination thereof.
9. A method for forming a memristor material by using ion implantation, comprising:
providing a substrate having a M layer formed thereon, wherein said M is an element selected from a group consisting of transition metal and non-metal; and
implanting numerous A components into said M layer so as to transform said M layer into a MA layer with numerous A vacancies inside said MA layer, wherein said A is an electron-rich element.
10. The method as claimed in claim 9 , wherein at least a portion of implanted A components are transformed into A — 2 components and out gassed said M layer during said implanting step.
11. The method as claimed in claim 9 , wherein said electron-rich element is selected from a group consisting of oxygen, sulfur, fluorine, chlorine, bromine, and iodine.
12. The method as claimed in claim 9 , said M is selected from a group consisting of Titanium, Tantalum, Calcium, Nickel, Cerium, Vanadium, Niobium, Tungsten, Zirconium, Indium, Zinc, Tin, Platinum, ruthenium, Iridium, Silver and other transition metal.
13. The method as claimed in claim 9 , wherein said non-metal is selected from a group consisting of carbon and silicon.
14. The method as claimed in claim 9 , wherein when there are at least two depleted regions having said A vacancies inside said MA layers, each said depleted region only partially overlapped with said MA layer and an arrangement direction of said depleted regions is selected from a group consisting of the following: vertical direction, horizontal direction and combination thereof.
15. A method for forming an electrode structure with memristance by implantation, comprising:
forming a first electrode on a substrate;
forming an M layer over said first electrode, wherein M is an element selected from a group consisting of transition metal and non-metal;
translating said M layer into a MA layer by implanting a plurality of A components into said M layer, herein said A is an electron-rich element; and
forming a second electrode over said MA layer and treating said MA layer, such that said MA layer has a plurality of A vacancies.
16. The method as claimed in claim 15 , wherein said M is selected from a group consisting of Titanium, Tantalum, Calcium, Nickel, Cerium, Vanadium, Niobium, Tungsten, Zirconium, Indium, Zinc, Tin, Platinum, ruthenium, Iridium, Silver and other transition metal.
17. The method as claimed in claim 15 , wherein said electron-rich element is selected from a group consisting of the following: oxygen, sulfur, fluorine, chlorine, bromine, and iodine.
18. The method as claimed in claim 15 , wherein said treating step comprises:
directly heating said MA layer; and
implanting a plurality of B components into said MA layer for forming a plurality of volatile AB components before said AB components are expelled to induce a plurality of A vacancies inside said MA layer.
19. The method as claimed in claim 15 , wherein said first electrode is formed of a metal or a metal oxide that forms a schottky contact with said MA layer, and said second electrode is formed of a metal or a metal oxide that forms an ohmic contact with said MA layer.
20. The method as claimed in claim 15 , wherein said first electrode is formed of a material having a relatively high work function when said MA layer is n-type, said first electrode may be formed of a material having a lower work function when said MA layer is p-type, and said second electrode is formed of platinum, ruthenium, iridium, or iridium oxide.