Methods for forming a titanium nitride layer
Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.
1. A method of forming a titanium nitride layer on a substrate, comprising:
providing a substrate into a processing chamber having a target comprising titanium disposed therein;
supplying a nitrogen-containing gas into the processing chamber;
sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and
upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.
2. The method of claim 1 , further comprising:
forming a magnetic field that biases ions in the processing chamber toward a central region of the processing chamber while depositing the titanium nitride layer to the desired thickness.
3. The method of claim 1 , further comprising:
applying a substrate bias while depositing the titanium nitride layer; and
reducing the substrate bias upon depositing the titanium nitride layer to the desired thickness.
4. The method of claim 1 , further comprising:
purging the processing chamber with a non-reactive gas upon forming the titanium nitride layer to the desired thickness.
5. The method of claim 1 , wherein the magnetic field is formed by one or more magnets disposed about an outer perimeter of the processing chamber.
6. The method of claim 5 , wherein the one or more magnets are a plurality of electromagnets arranged in an inner magnet ring and an outer magnet ring disposed radially outward of the inner magnet ring.
7. A method of forming an interconnection structure on a substrate, comprising:
providing a substrate having a first conductive layer disposed thereon;
forming a titanium nitride barrier layer on the first conductive layer;
upon depositing the titanium nitride barrier layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate; and
forming a second conductive layer on the titanium nitride barrier layer.
8. The method of claim 7 , further comprising:
forming a magnetic field that biases ions in the processing chamber toward a central region of the processing chamber while depositing the titanium nitride barrier layer to the desired thickness.
9. The method of claim 8 , further comprising:
applying a substrate bias while depositing the titanium nitride barrier layer; and
reducing the substrate bias upon depositing the titanium nitride barrier layer to the desired thickness.
10. The method of claim 7 , further comprising:
purging the processing chamber with a non-reactive gas upon forming the titanium nitride barrier layer to the desired thickness.
11. The method of claim 7 , wherein the magnetic field is formed by one or more magnets disposed about an outer perimeter of the processing chamber.
12. The method of claim 11 , wherein the one or more magnets are a plurality of electromagnets arranged in an inner magnet ring and an outer magnet ring disposed radially outward of the inner magnet ring.
13. The method of claim 7 , wherein the first and the second conductive layers each comprise at least one of copper, aluminum, or tungsten.
14. A method of forming an interconnection structure on a substrate, comprising:
providing a substrate having a dielectric layer disposed on a first conductive layer comprising copper, the dielectric layer having a via formed therein to expose a portion of an upper surface of the first conductive layer;
depositing a titanium nitride barrier layer by a PVD process within the via, the upper surface of the dielectric layer and the exposed surface of the first conductive layer;
upon forming the titanium nitride barrier layer to a desired thickness, forming a magnetic field that biases ions formed during the PVD process away from the substrate; and
depositing a second conductive layer atop the titanium nitride barrier layer to fill the via formed within the dielectric layer.
15. The method of claim 14 , further comprising:
forming a magnetic field that biases ions in the processing chamber toward a central region of the processing chamber while depositing the titanium nitride barrier layer to the desired thickness.
16. The method of claim 14 , further comprising:
applying a substrate bias while depositing the titanium nitride barrier layer; and
reducing the substrate bias upon depositing the titanium nitride barrier layer to the desired thickness.
17. The method of claim 14 , further comprising:
purging the processing chamber with a non-reactive gas upon forming the titanium nitride barrier layer to the desired thickness.
18. The method of claim 14 , wherein the magnetic field is formed by one or more magnets disposed about an outer perimeter of the processing chamber.
19. The method of claim 18 , wherein the one or more magnets are a plurality of electromagnets arranged in an inner magnet ring and an outer magnet ring disposed radially outward of the inner magnet ring.
20. The method of claim 14 , wherein the second conductive layer comprises at least one of copper, aluminum, or tungsten.