Monolithic thin-film piezoelectric filters
Disclosed are exemplary monolithic acoustically coupled thin film piezoelectric-on-substrate filters that operate in a wide frequency range. The monolithic thin-film-piezoelectric acoustic filters includes a resonant structure that is released from and supported by a substrate that comprises a thin-film piezoelectric layer disposed between a lower electrode and a plurality of electrically isolated upper electrodes. Second order narrowband filters are realized by utilizing coupled resonance modes of a single microstructure. Narrow-bandwidth filters are disclosed that are suitable for channel-select applications in IF and RF bands. Filter Q values of 800 at 250 MHz, 470 at 360 MHz, and 400 at 3.5 GHz for small footprint second-order filters are disclosed. The measured power handling of these devices is high due to the use of high energy density structural material, showing a 0.2 dB compression point of >15 dBm at 360 MHz.
1. A microelectromechanical acoustic filter apparatus comprising:
a substrate; and
a resonant structure released from and supported by the substrate that comprises:
a thin-film piezoelectric layer disposed between a lower electrode and a plurality of electrically isolated upper electrodes patterned to excite a plurality of acoustically-coupled resonance modes of the resonant structure, wherein the resonant structure is connected by way of support beams to the substrate;
wherein the order of the frequency response of the filter is greater than two.
2. The apparatus recited in claim 1 wherein the material of the thin-film piezoelectric layer is selected from a group including zinc oxide (ZnO), aluminum nitride (AIN), and lead zirconate titanate (PZT).
3. The apparatus recited in claim 1 wherein the lower electrode and the plurality of upper electrodes excite fundamental or high-order width- or length-extensional, resonance modes of the structure.
4. The apparatus recited in claim 1 wherein the lower electrode and the plurality of upper electrodes excite fundamental or high-order thickness-extensional resonance modes of the structure
5. The apparatus recited in claim 1 wherein the lower electrode and the plurality of upper electrodes excite shear resonance modes of the structure.
6. The apparatus recited in claim 1 wherein the resonant structure further comprises a portion of the substrate.
7. The apparatus recited in claim 1 wherein the substrate comprises an insulating layer disposed on a lower support substrate and wherein the resonant structure further comprises a portion of the insulating layer.
8. The apparatus recited in claim 1 wherein a cavity is formed beneath the resonant structure to release it from the substrate.
9. The apparatus recited in claim 1 wherein the substrate comprises a silicon-on-insulator substrate.
10. Microelectromechanical acoustic filter apparatus comprising:
a substrate comprising a silicon-on-insulator (SOI) substrate; and
a resonant structure released from and supported by the substrate that comprises:
a thin-film piezoelectric layer disposed between a lower electrode and a plurality of electrically isolated upper electrodes that comprise interdigitated fingers to provide a second order filter that operates in fundamental or high-order thickness-extensional mode; and
a portion of the silicon device layer of the SOI substrate.
11. The apparatus recited in claim 10 wherein a cavity is formed beneath the resonant structure to release it from the substrate.
12. The apparatus recited in claim 10 wherein a pattern and/or the dimensions of the electrically isolated interdigitated fingers are altered to design for the filter bandwidth.
13. The apparatus recited in claim 10 wherein the substrate comprises an insulating layer disposed on a silicon substrate and the resonant structure further comprises a portion of the insulating layer.
14. A microelectromechanical acoustic filter apparatus comprising:
a substrate; and
a resonant structure released from and supported by the substrate that comprises:
a thin-film piezoelectric layer disposed between a lower electrode and a plurality of electrically isolated upper electrodes that comprise two sets of spaced apart opposed electrically connected fingers to provide a second order filter that operates in lateral, fundamental or high-order width- or length-extensional, resonance mode, the plurality of electrically isolated upper electrodes patterned to excite a plurality of acoustically-coupled resonance modes of the resonant structure;
wherein the substrate comprises a silicon-on-insulator (SOI) substrate and wherein the resonant structure further comprises a portion of the silicon device layer of the SOI substrate.
15. The apparatus recited in claim 14 wherein the substrate comprises an insulating layer disposed on a silicon substrate and the resonant structure further comprises a portion of the insulating layer.
16. The apparatus recited in claim 14 wherein the substrate comprises polycrystalline diamond disposed on a silicon substrate.
17. The apparatus recited in claim 14 wherein the pattern and/or dimensions of the spaced apart sets of connected fingers are altered to design for the filter bandwidth.
18. The apparatus recited in claim 14 wherein a cavity is formed beneath the resonant structure to release it from the substrate.