Semiconductor device having a SRAM with a substrate contact and method for fabricating the same
An isolation insulating film is formed so that an active region of a first access transistor and a substrate contact region can be integrated with each other in a plan view. A dummy gate electrode is formed on the semiconductor substrate between the active region of the first access transistor and the substrate contact region. The dummy gate electrode is electrically connected to a P-type impurity region of the substrate contact region.
1. A semiconductor device equipped with an SRAM, the SRAM including:
a semiconductor region surrounded by an isolation region, the semiconductor region being formed on a semiconductor substrate;
a first MIS transistor disposed in a first region of the semiconductor region, the first MIS transistor comprising a first gate electrode formed on an first active region in the first region, a first source/drain region of a first conductive type formed in the first region and a second source/drain region of the first conductive type formed in the first region; and
a substrate contact region for grounding the semiconductor substrate, the substrate contact region being disposed on a second region of the semiconductor region, the substrate contact region comprising an impurity region of a second conductive type,
wherein the first region and the second region are formed within the semiconductor region and not partitioned from each other by the isolation region.
2. The semiconductor device of claim 1 , wherein the substrate contact region is grounded.
3. The semiconductor device of claim 1 , wherein the SRAM further comprising:
a first dummy gate electrode disposed in the first region and between the first source/drain region and the substrate contact region,
wherein the first dummy gate electrode is electrically connected to the substrate contact region through a metal line or a shared contact.
4. The semiconductor device of claim 1 , wherein the first MIS transistor is an access transistor of the SRAM.
5. The semiconductor device of claim 1 , wherein the SRAM further comprising:
a second MIS transistor disposed in a third region of the semiconductor region, the second MIS transistor comprising a second gate electrode formed on an second active region in the third region, a third source/drain region of a first conductive type formed in the third region and a fourth source/drain region of the first conductive type formed in the third region,
wherein the first region, the second region and the third region are formed within the semiconductor region and not partitioned from each other by the isolation region.
6. The semiconductor device of claim 5 , wherein the substrate contact region is electrically connected to the third source/drain region through a metal line.
7. The semiconductor device of claim 3 , wherein the SRAM further comprising:
a second MIS transistor disposed in a third region of the semiconductor region, the second MIS transistor comprising a second gate electrode formed on an second active region in the third region, a third source/drain region of a first conductive type formed in the third region and a fourth source/drain region of the first conductive type formed in the third region,
wherein the first region, the second region and the third region are formed within the semiconductor region and not partitioned from each other by the isolation region.
8. The semiconductor device of claim 7 , wherein the substrate contact region is electrically connected to the third source/drain region through a metal line.
9. The semiconductor device of claim 7 , wherein the SRAM further comprising:
a second dummy gate electrode disposed in the third region and between the third source/drain region and the substrate contact region.
10. The semiconductor device of claim 9 , wherein the second dummy gate electrode has a shorter gate length than the first dummy gate electrode.
11. The semiconductor device of claim 7 , wherein the second MIS transistor is a driver transistor of the SRAM.
12. The semiconductor device of claim 7 , wherein
the semiconductor region comprises a first semiconductor region having a first end portion and a second end portion, second semiconductor region and a third semiconductor region,
the third semiconductor region connects the first and second semiconductor region at a middle portion of each of the first and second semiconductor region forming H shape in a plan view, and
the first region is disposed in the first end portion, the second region is disposed in the second semiconductor region and the third region is disposed in the second end portion.
13. The semiconductor device of claim 1 , wherein a metal suicide film is provided on each of the gate electrode, the first and second source/drain region and the impurity region.
14. The semiconductor device of claim 1 , wherein a well region of a second conductivity type is provided in each of the first and second regions, and
the impurity region is formed on the well region provided in the second region.
15. The semiconductor device of claim 3 ,
wherein a well region of a second conductivity type is provided in each of the first and second regions,
the impurity region is formed on the well region provided in the second region, and
the first dummy gate electrode is fixed to a same potential as a potential of the well region.