Method of enclosing a micro-electromechanical element

1. A method, in a complementary metal oxide semiconductor fabrication process, of creating a layered housing containing a micro-electromechanical system device, the method comprising the steps of:

providing a cavity in at least one layer of the housing, the cavity being accessible through via holes in a layer of insulating material deposited thereon, and the layer of insulating material being covered by a thin film layer of conductive material;

hydrophobically treating at least a portion of the inner surface of the cavity;

submerging the wafer in an electroplating solution; and

electroplating a conductive layer onto the thin film layer of conductive material such that the cavity remains free of electroplating solution.

2. The method of claim 1 , wherein the step of providing a cavity further comprises the steps of:

providing a micro-electromechanical system device on a first layer of sacrificial material;

depositing a second layer of sacrificial material on at least a portion of the micro-electromechanical system device;

depositing a layer of insulating material on the layer of sacrificial material;

depositing at least one thin film layer of conductive material on the layer of insulting material;

patterning and etching via holes so as to expose at least a portion of the second layer of sacrificial material; and

removing, through the via holes, at least a portion of the first and second layers of sacrificial material by way of etching, thereby defining a cavity in which at least a portion of the micro-electromechanical system device is contained.

3. The method of claim 1 , wherein the step of providing a cavity further comprises the steps of:

providing a micro-electromechanical system device on a first layer of sacrificial material;

depositing a second layer of sacrificial material on at least a portion of the micro-electromechanical system device;

depositing a layer of insulating material on the second layer of sacrificial material;

patterning and etching via holes so as to expose at least the second layer of sacrificial material;

removing, through the via holes, at least a portion of the first and second layers of sacrificial material by way of etching, thereby defining a cavity in which at least a portion of the micro-electromechanical system device is contained; and

depositing at least one thin film layer of conductive material on the layer of insulating material and the inner surfaces of the via holes.

4. The method of claim 1 , wherein the step of electroplating a conductive layer further comprises:

maintaining the temperature of the electroplating solution at room temperature or higher.

5. The method of claim 1 , wherein the step of electroplating a conductive layer further comprises:

minimizing the change in temperature during the electroplating process.

6. The method of claim 1 , wherein the step of electroplating a conductive layer further comprises:

minimizing the vibration of the thin film layer during the electroplating process.

7. The method of claim 1 , wherein the step of hydrophobically treating at least a portion of the inner surface of the cavity further comprises:

treating the at least a portion of the inner surface of the cavity using a fluoride-based dry etch.

8. The method of claim 1 , wherein the step of hydrophobically treating at least a portion of the inner surface of the cavity further comprises:

treating the at least a portion of the inner surface of the cavity using a liquid-based hydrofluoric etch.

9. The method of claim 1 , wherein the electroplated layer is a layer of copper.

10. The method of claim 1 , wherein the thin film layer of conductive material comprises titanium.

11. The method of claim 1 , wherein the thin film layer of conductive material comprises tantalum.

12. The method of claim 1 , wherein the thin film layer of conductive material comprises copper.