Material processing system and method
View Patent ↗A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.
1. A method for processing a work piece, the method comprising:
obtaining, with an electron microscope, a first electron-microscopic image of a portion of the work piece by directing an electron beam to a plurality of locations within the portion and recording secondary electrons emanating from the work piece in dependence of the locations to which the electron beam is directed;
determining, based on the obtained first electron microscopic image, at least one first location within the portion of the work piece where material is to be removed from or where material is to be deposited on the work piece;
supplying at least one reactive gas to the portion of the work piece; and
directing an electron beam of the electron microscope to induce the at least one reactive gas to react with the work piece by directing the electron beam to the determined at least one first location.
2. The method according to claim 1 , further comprising obtaining, with the electron microscope, a second electron-microscopic image after the reaction has been induced to react with the work piece, and determining, based on the obtained second electron-microscopic image, at least one second location within the portion of the work piece where material is to be removed from or where material is to be deposited on the work piece.
3. The method according to claim 1 , wherein the determining is based on a comparison of the first electron microscopic image with a reference image of the work piece.
4. The method according to claim 1 , wherein the work piece comprises a mask for use in a lithographic process.
5. The method according to claim 1 , further comprising defining a partially enclosed region by
an electrode of the electron microscope proximate to the work piece,
an annular projection of the electrode extending towards the work piece, and
the work piece, and
wherein the at least one reactive gas is supplied into the partially enclosed region.
6. The method according to claim 5 , further comprising maintaining a gap between the annular projection and the work piece while supplying the at least one reactive gas into the partially enclosed region.
7. The method according to claim 6 , wherein the gap is also maintained while obtaining the first electron-microscopic image of the portion of the work piece.
8. The method according to claim 6 , wherein the gap is smaller than 100 μm.
9. The method according to claim 5 , wherein, during the supplying of the at least one reactive gas into the partially enclosed region, a gas pressure within the partially enclosed region is significantly higher than a gas pressure outside of the partially enclosed region.
10. The method according to claim 5 , wherein, during the supplying of the at least one reactive gas into the partially enclosed region, a gas pressure experienced by a portion of the work piece within the partially enclosed region is significantly higher than a gas pressure experienced by a portion of the work piece outside of the partially enclosed region.