Transflective type diode substrate and method having respective masks forming scan line and insulating pattern, organic pattern with hole exposing insulating pattern, and pixel electrode covering hole and reflection electrode overlapping organic pattern
A transflective diode substrate for a liquid crystal display device, includes: a reflective zone including a diode having a scan electrode, an insulating pattern on the scan electrode and a pixel electrode over the scan electrode, organic patterns around the diode, and a reflection electrode over the organic patterns; and a transmissive zone adjacent to the reflective zone; wherein the pixel electrode is formed in the reflective zone and the transmissive zone.
1. A method of manufacturing a transflective diode substrate of liquid crystal display device comprising:
forming a scan line on a substrate, a scan electrode connected to the scan line, and an insulating pattern on the scan line and the scan electrode using a first mask;
forming an organic pattern and an organic hole exposing the insulating pattern using a second mask; and
forming a pixel electrode covering the organic hole, forming a diode including the scan electrode, the insulating pattern and the pixel electrode, and forming a reflection electrode overlapping with the organic pattern with the pixel electrode therebetween using a third mask.
2. The method for manufacturing a transflective diode substrate according to claim 1 , wherein the scan line includes:
a first scan line close to a first side of the pixel electrode and a second scan line close to a second side of the pixel electrode;
wherein the diode includes a first diode connected to the first scan line and a second diode connected to the second scan line.
3. The method for manufacturing a transflective diode substrate according to claim 1 , wherein the forming step using the first mask further forming a scan pad lower electrode connected to the scan line.
4. The method for manufacturing a transflective diode substrate according to claim 1 , wherein the forming step using the first mask includes:
depositing a scan metal, an inorganic material and photo-resist on the substrate sequentially;
forming a first photo-resist pattern having a first height and a second photo-resist pattern having a second height lower than the first height, using a photo-lithography process using the first mask;
patterning the inorganic insulating material and the scan metal to form the scan line, the scan electrode and the insulating pattern at an area corresponding to the first photo-resist pattern, and the scan pad lower electrode and the insulating pattern at an area corresponding to the second photo-resist pattern;
ashing the first and second photo-resists to expose the insulating pattern on the scan pad lower electrode;
etching the exposed insulating pattern to expose the scan pad lower electrode; and
removing the remaining photo-resist pattern using a stripping process.
5. The method for manufacturing a transflective diode substrate according to claim 3 , wherein the forming step using the third mask further forming a scan pad upper electrode connecting to the scan pad lower electrode.
6. The method for manufacturing a transflective diode substrate according to claim 5 , wherein the forming step using the second mask further forming an organic pattern, between the scan pad lower electrode and the scan pad upper electrode, having a contact hole exposing the scan pad lower electrode.
7. The method for manufacturing a transflective diode substrate according to the claim 1 , wherein the forming step using the third mask further forming a protective pattern between the pixel electrode and the reflection electrode.