Radiation-triggered semiconductor shutdown device

1. An integrated circuit comprising:

a radiation-triggered shutdown circuit responsive to a received radiation dose being larger than a predetermined radiation dose to render the integrated circuit inoperable;

wherein the radiation-triggered shutdown circuit further comprises a detector circuit configured to provide a detect signal having a first value in response to the received radiation dose being below the predetermined radiation dose and a second value in response to the radiation dose being above the predetermined radiation dose; and

wherein the detector circuit comprises,

a first transistor coupled between a first power supply and a first node, a gate of the first transistor being coupled to the first node;

a second transistor coupled between a second node and ground, a gate of the second transistor being coupled to the first node;

a first resistor coupled between the first node and ground; and

a second resistor coupled between the first power supply and the second node; and

wherein the second node supplies the detect signal of the detector circuit.

2. The integrated circuit as recited in claim 1 wherein the radiation-triggered shutdown circuit further comprises a disable circuit coupled to the detector circuit and configured to use the detect signal from the detector circuit as a control signal, the disable circuit responsive to the control signal being at the second value to supply a signal to render the integrated circuit inoperable and responsive to the first value of the control signal to allow proper operation of the integrated circuit.

3. The integrated circuit as recited in claim 2 wherein a critical signal required for proper operation of the integrated circuit is supplied by the disable circuit.

4. The integrated circuit as recited in claim 3 wherein the critical signal is one or more of a reset signal and a clock signal.

5. The integrated circuit as recited in claim 3 wherein the disable circuit is a switching circuit and the critical signal is supplied by the switching circuit when the control signal is at the first value and is not supplied by the switching circuit when the control signal is at the second value.

6. The integrated circuit as recited in claim 1 wherein the first and second resistors are variable resistors and a trigger point of the detector circuit corresponding to the received radiation dose is determined according to, at least in part, settings of the variable resistors.

7. The integrated circuit as recited in claim 1 wherein the detector circuit utilizes transistor leakage current that increases according to the radiation dose.

8. The integrated circuit as recited in claim 1 wherein the integrated circuit is a silicon on insulator integrated circuit and the detector circuit utilizes a threshold voltage (Vt) shift due to charges trapped in a buried oxide layer due to radiation.

9. The integrated circuit as recited in claim 1 wherein the predetermined radiation dose is below about 500 Krads.

10. The integrated circuit as recited in claim 9 wherein the predetermined radiation dose is in the range of about 200 Krads to about 300 Krads.

11. The integrated circuit as recited in claim 1

wherein the radiation-triggered shutdown circuit further comprises:

at least two additional detector circuits, each of the additional detector circuits configured to provide respective detect signals having the first value in response to the received radiation dose being below the predetermined radiation dose and the second value in response to the radiation dose being above the predetermined radiation dose; and

a voting circuit coupled to receive the detect signals from respective ones of the detector circuits and to supply a disable control signal according to a voting scheme, the disable control signal indicative of whether to render the integrated circuit inoperable.

12. The integrated circuit as recited in claim 1 further comprising an RC filter coupled between the first node and ground.