Semiconductor fin based nonvolatile memory device and method for fabrication thereof
View Patent ↗A semiconductor structure and a method for fabricating the semiconductor structure include a semiconductor fin having a first side and a second side opposite the first side. A first gate dielectric and a charge storage layer are successively layered upon the first side of the semiconductor fin. A second gate dielectric and a gate electrode are layered upon the second side and the charge storage layer. The semiconductor structure comprises a nonvolatile semiconductor device.
1. A semiconductor structure comprising:
a semiconductor fin located over a substrate and having a first side and a second side opposite the first side;
a first gate dielectric located upon the first side of the semiconductor fin and a charge storage layer located upon the first gate dielectric, wherein the first gate dielectric is not located upon the second side of the semiconductor fin; and
a second gate dielectric located upon both the second side of the semiconductor fin and the charge storage layer, and a gate electrode located upon the second gate dielectric.
2. The semiconductor structure of claim 1 wherein the charge storage layer comprises a conductor material.
3. The semiconductor structure of claim 1 wherein the charge storage layer comprises a dielectric material.
4. The semiconductor structure of claim 1 wherein the charge storage layer does not straddle the semiconductor fin.
5. The semiconductor structure of claim 1 wherein the second gate dielectric straddles the semiconductor fin.
6. The semiconductor structure of claim 1 wherein the gate electrode straddles the semiconductor fin.
7. A semiconductor structure comprising:
a semiconductor fin located over a substrate and having a first side and a second side opposite the first side;
a first gate dielectric located upon the first side of the semiconductor fin and a charge storage layer located upon the first gate dielectric, wherein the first gate dielectric does not straddle the semiconductor fin; and
a second gate dielectric located upon both the second side of the semiconductor fin and the charge storage layer, and a gate electrode located upon the second gate dielectric.
8. A semiconductor structure comprising:
a semiconductor fin located over a substrate and having a first side and a second side opposite the first side;
a first gate dielectric located upon the first side of the semiconductor fin and a charge storage layer located upon the first gate dielectric, said charge storage layer does not straddle the semiconductor fin; and
a second gate dielectric located upon both the second side of the semiconductor fin and the charge storage layer, and a gate electrode located upon the second gate dielectric.