Lid assembly for a processing system to facilitate sequential deposition techniques

1. A lid assembly for a substrate processing system, the lid assembly comprising:

a lid having first and second opposed surfaces;

a plurality of controllable flow channels extending from the first and second opposed surfaces;

a gas control system disposed on the first surface, wherein the gas control system comprises:

a gas manifold disposed on the lid;

at least one valve coupled to the gas manifold and adapted to control a gas flow through one of the controllable flow channels, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second for enabling an atomic layer deposition process;

a gas reservoir fluidly connected to the gas manifold; and

a precursor source fluidly connected to the gas reservoir; and

a remote plasma source fluidly connected to one of the controllable flow channels.

2. The lid assembly of claim 1 , wherein the gas manifold comprises:

an upper surface and a lower surface;

a first channel, a second channel, and a third channel each extending through the gas manifold and exiting the lower surface; and

a fourth channel extending from the upper surface and coupling to the third channel.

3. The lid assembly of claim 2 , wherein the gas manifold further comprises a conduit disposed therein and adapted to flow a heat transfer fluid therethrough.

4. The lid assembly of claim 1 , wherein the gas reservoir is connected between the precursor source and the gas manifold.

5. The lid assembly of claim 4 , wherein the gas reservoir is positioned on the lid.

6. The lid assembly of claim 4 , wherein a second gas reservoir is fluidly connected between the gas manifold and a second precursor source.

7. The lid assembly of claim 1 , wherein the at least one valve is configured to provide the open and close cycle having a time period of less than about 0.1 seconds.

8. The lid assembly of claim 1 , further comprising a second valve coupled to the gas manifold and adapted to control a second gas flow through one of the controllable flow channels for a time period of less than about 1 second for enabling the atomic layer deposition process.

9. The lid assembly of claim 8 , further comprising a third valve coupled to the gas manifold and adapted to control a third gas flow through one of the controllable flow channels for a time period of less than about 1 second for enabling the atomic layer deposition process.

10. A lid assembly for a substrate processing system, the lid assembly comprising:

a lid having first and second opposed surfaces, the first and second opposed surfaces having a first inlet channel, a second inlet channel, and a third inlet channel disposed therethrough;

a gas manifold coupled to the first surface of the lid, the gas manifold comprising:

a body having an upper surface and lower surface; and

a first channel, a second channel, and a third channel each extending through the gas manifold to the lower surface;

a remote plasma source fluidly connected to the gas manifold;

a valve coupled to the gas manifold and adapted to control a gas flow, wherein the valve is configured to provide an open and close cycle having a time period of less than about 1 second for enabling an atomic layer deposition process; and

a gas reservoir fluidly connected between the gas manifold and a precursor source.

11. The lid assembly of claim 10 , further comprising a thermal conditioning channel disposed in the gas manifold fluidly coupling the valve and the gas reservoir.

12. The lid assembly of claim 11 , wherein the gas manifold further comprises a fourth channel coupled between the upper surface and the third channel.

13. The lid assembly of claim 10 , wherein a second gas reservoir is fluidly connected to the gas manifold and to a second precursor source.

14. The lid assembly of claim 10 , wherein the valve is configured to provide the open and close cycle having a time period of less than about 0.1 seconds.

15. The lid assembly of claim 10 , further comprising a second valve coupled to the gas manifold and adapted to control a second gas flow for a time period of less than about 1 second for enabling the atomic layer deposition process.

16. A lid assembly for a substrate processing system, the lid assembly comprising:

a lid having first and second opposed surfaces, the first and second opposed surfaces having a plurality of inlet channels disposed therethrough;

a gas manifold coupled to the first surface of the lid, the gas manifold comprising:

a body having an upper surface and lower surface;

a plurality of gas channels extending through the gas manifold to the lower surface; and

a thermal conditioning channel disposed in the gas manifold and fluidly coupled to at least one of the plurality of gas channels;

a valve coupled to the gas manifold and adapted to control a gas flow, wherein the valve is configured to provide an open and close cycle having a time period of less than about 1 second for enabling an atomic layer deposition process;

a remote plasma source fluidly connected to the gas manifold; and

a gas reservoir fluidly connected between the gas manifold and a precursor source.

17. The lid assembly of claim 16 , wherein the gas reservoir is positioned on the lid.

18. The lid assembly of claim 16 , wherein a second gas reservoir is fluidly connected to the gas manifold and to a second precursor source.

19. The lid assembly of claim 16 , wherein the is configured to provide the open and close cycle having a time period of less than about 0.1 seconds.

20. The lid assembly of claim 16 , further comprising a second valve coupled to the gas manifold and adapted to control a second gas flow for a time period of less than about 1 second for enabling the atomic layer deposition process.