IP Library Granted Patent US 7,907,224
Granted Patent B2
US 7,907,224 · App. 12/120,120 · Granted Mar 15, 2011

Image display device

Assignee: Toppan Printing Co., Ltd.
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Quick Facts
Patent No.
US 7,907,224
App. No.
12/120,120
Granted
Mar 15, 2011
Kind
B2
Abstract

One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

Claims (50)

1. An image display device, comprising:

a substantially transparent substrate;

a color filter layer formed on the substantially transparent substrate; and

a substantially transparent semiconductor circuit formed on the color filter layer, comprising:

a substantially transparent thin film transistor, comprising:

a source electrode;

a drain electrode;

a gate insulating film;

a gate electrode; and

a semiconductor active layer comprised of an amorphous zinc gallium indium oxide, the semiconductor active layer having a thickness of 15 nm-35 nm, the amorphous zinc gallium indium oxide having electron carrier concentration being equal to or less than 10 18 /cm 3 ;

and

a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor,

wherein the substantially transparent semiconductor circuit has on/off ratio of 3×10 7 -6×10 7 in a light irradiation state.

2. The image display device according to claim 1 ,

wherein an image display element is formed on the substantially transparent semiconductor circuit.

3. The image display device according to claim 2 ,

wherein the image display element includes a liquid crystal cell or an electrophoresis particle.

4. An image display device, comprising:

a substantially transparent substrate;

a color filter layer formed on the substantially transparent substrate; and

a substantially transparent semiconductor circuit formed on the color filter layer, comprising:

a substantially transparent thin film transistor, comprising:

a source electrode;

a drain electrode;

a gate insulating film;

a gate electrode; and

a semiconductor active layer comprised of an amorphous zinc gallium indium oxide, the semiconductor active layer having a thickness of 15 nm, the amorphous zinc gallium indium oxide having electron carrier concentration being equal to or less than 10 18 /cm 3 ;

and

a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor,

wherein the substantially transparent semiconductor circuit has on/off ratio of 6×10 7 in a light irradiation state.

5. The image display device according to claim 4 ,

wherein an image display element is formed on the substantially transparent semiconductor circuit.

6. The image display device according to claim 5 ,

wherein the image display element includes a liquid crystal cell or an electrophoresis particle.

7. An image display device, comprising:

a substantially transparent substrate;

a color filter layer formed on the substantially transparent substrate; and

a substantially transparent semiconductor circuit formed on the color filter layer, comprising:

a substantially transparent thin film transistor, comprising:

a source electrode;

a drain electrode;

a gate insulating film;

a gate electrode; and

a semiconductor active layer comprised of a metal oxide, the semiconductor active layer having a thickness of 10 nm-35 nm, the metal oxide having electron carrier concentration being equal to or less than 10 18 /cm 3 ;

and

a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

8. The image display device according to claim 7 ,

wherein an image display element is formed on the substantially transparent semiconductor circuit.

9. The image display device according to claim 8 ,

wherein the image display element includes a liquid crystal cell or an electrophoresis particle.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 13, 2008
From: ITO, MANABU; MIYAZAKI, CHIHIRO
To: TOPPAN PRINTING CO., LTD.
Reel/Frame 020943/0421 →
Priority Claims (1)
JP 2007-130279 · May 16, 2007 · national
Continuity (1)
Related Publication 20080284933A1 · Nov 20, 2008