Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films
A denticulated Group III nitride structure that is useful for growing Al x Ga 1-x N to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
1. A Group III nitride structure, the structure comprising:
a substrate;
a denticulated Group III nitride layer, wherein denticles of the denticulated Group III nitride layer are substantially conical and positioned sufficiently closely together to be in contact with adjacent denticles; and
a Group III nitride layer on top of the denticulated Group III nitride layer,
wherein the Group III nitride layer is a high-temperature Group III nitride layer, comprising a dislocation-interaction zone epitaxially atop the denticulated Group III nitride layer and a lower-threading-dislocation-density layer epitaxially atop the dislocation-interaction zone.
2. The Group III nitride structure of claim 1 , wherein the denticulated Group III nitride layer is grown at a moderate temperature.
3. The Group III nitride structure of claim 2 , wherein the moderate temperature is a temperature between approximately 900° C. and 1020° C.
4. The Group III nitride structure of claim 1 , wherein a thickness of the denticulated Group III nitride layer is greater than or equal to approximately 0.04 micrometers.
5. The Group III nitride structure of claim 1 , wherein the denticulated Group III nitride layer comprises Al x Ga 1-x N wherein 0.25≦x≦1.
6. The Group III nitride structure of claim 1 , further comprising a low-temperature-grown nucleation layer.
7. The Group III nitride structure of claim 1 , wherein the substrate is sapphire, silicon carbide, silicon, lithium gallate, lithium aluminate, lithium nitrate, zinc oxide, gallium nitride, aluminum nitride, spinel (MgAl 2 O 4 ), hafnium (Hf), or zirconium diboride.
8. The Group III nitride structure of claim 1 , wherein the substrate comprises a textured substrate.
9. The Group III nitride structure of claim 1 , further comprising an n-type Group III nitride cladding layer, a Group III nitride quantum well, and a p-type Group III nitride cladding layer.
10. The Group III nitride structure of claim 1 , wherein a base lateral dimension of a majority of denticles of the denticulated Group III nitride layer is between approximately 100 nm and approximately 400 nm and wherein a rms roughness of the denticulated Group III nitride layer is between approximately 10 nm and approximately 30 nm.