IP Library Granted Patent US 7,919,188
Granted Patent B2
US 7,919,188 · App. 11/806,465 · Granted Apr 5, 2011

Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials

Assignee: Roskilde Semiconductor LLC
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Quick Facts
Patent No.
US 7,919,188
App. No.
11/806,465
Granted
Apr 5, 2011
Kind
B2
Abstract

This disclosure relates generally to polymeric networks of fullerene compounds, to methods of preparing precursors for such networks, and to their subsequent use as low dielectric constant materials in microelectronic devices.

Claims (17)

1. A fullerene polymer film on a substrate, the film consisting of:

two or more fullerene molecules; and

two or more reactive arms bridging the fullerene molecules, each reactive arm coupled to the fullerene molecules via an amine and including an organic spacer portion linked to the amine and terminating in a metal or metalloid alkoxide;

wherein the fullerene molecules are linked to each other via an oxide bond, and wherein the fullerene molecules are bonded to the substrate.

2. The fullerene polymer film of claim 1 , wherein the fullerenes are selected from the group consisting of: C 60 , C 70 , C 72 , C 76 , C 78 , C 84 , C 96 , and mixtures thereof.

3. The fullerene polymer film of claim 1 , wherein the metal or metalloid alkoxide is selected from the group consisting of: —Si(OR) 3 , —Ge(OR) 3 , —Ti(OR) 3 , —Zr(OR) 3 , —Sn(OR) 3 , —Al(OR) 2 , and B(OR) 2 .

4. The fullerene polymer film of claim 1 , wherein the two or more reactive arms comprise an amine selected from the group consisting of: 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminoethyl-3-aminopropyltrimethoxysilane, 2-aminoethyl-3-aminopropyltriethoxysilane, diethyl-enetriaminopropyltrimethoxysilane, hexanediaminomethyltriethoxysilane, and 11-aminoundecyltriethoxysilane.

5. The fullerene polymer film of claim 1 , wherein the substrate comprises a metal.

6. The fullerene polymer film of claim 1 , wherein the substrate comprises an oxide.

7. The fullerene polymer film of claim 1 , wherein the organic spacer portion comprises an alkyl chain that includes 3 to 20 carbon atoms.

8. The fullerene polymer film of claim 1 , wherein the organic spacer portion comprises an alkyl chain that includes 3 to 7 carbon atoms.

9. The fullerene polymer film of claim 1 , wherein the organic spacer portion comprises an alkyl chain that includes 10 to 20 carbon atoms.

10. The fullerene polymer film of claim 1 , wherein the organic spacer portion comprises an alkyl chain that includes one or more groups selected from: an ether group, an amino group, an alkynyl group, or an aryl group.

11. The fullerene polymer film of claim 1 , comprising a fullerene molecule having six reactive arms.

12. The fullerene polymer film of claim 1 , wherein the fullerenes are C 60 .

13. The fullerene polymer film of claim 1 , wherein the fullerene polymer film has a dielectric constant of less than about 2.

14. The fullerene polymer film of claim 1 , wherein the fullerene molecules are bonded to the substrate via an oxide bond.

Assignments (2)
MERGER Recorded Oct 21, 2015
From: ROSKILDE SEMICONDUCTOR LLC
To: XYLON LLC
Reel/Frame 036908/0533 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2007
From: AYERS, MICHAEL RAYMOND
To: ROSKILDE SEMICONDUCTOR LLC
Reel/Frame 019775/0362 →
Continuity (2)
Provisional Application 60809348 · May 31, 2006
Related Publication 20080108774A1 · May 8, 2008