Junction formation on wafer substrates using group IV nanoparticles
A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
1. A method of forming a diffusion region, comprising:
coating the surface of a wafer with a spacer layer, before the depositing of the nanoparticle ink;
depositing a nanoparticle ink on a surface of the wafer to form a non-densified film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein;
heating the non-densified film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink;
heating the non-densified film to a second temperature and for a second time period to form a densified film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region; and,
removing the densified film and the spacer layer, after heating the non-densified thin film to a second temperature and for a second time period.
2. The method of claim 1 , wherein the step of removing the densified film and the spacer layer includes using one of an HF dip or a buffered oxide dip.
3. The method of claim 1 , wherein the spacer layer comprises oxide.