Solid-state image capturing device, image capturing device, and manufacturing method of solid-state image capturing device
A solid-state image capturing device includes a first detecting unit for detecting a first wavelength component and a second detecting unit for detecting a second wavelength component which has a longer wavelength than at least the first wavelength component and wherein in a depth direction, an active region where a first type dopant of the second detecting unit is located is deeper than an active region where a first electroconductive type dopant of the first detecting unit is located. A signal processor modifies an output signal from at least one detecting unit based on a received signal quantity at another detecting unit and a type of filter above at least one of the detecting units.
1. A solid-state image capturing device, comprising:
a first detecting unit configured to detect a first wavelength component; and
a second detecting unit configured to detect a second wavelength component which has a longer wavelength than said first wavelength component;
and wherein, in the depth direction, an active region where a first type dopant of said second detecting unit is formed reaches deeper than an active region where said first type dopant of said first detecting unit is located; and further wherein a signal processor modifies an output signal from at least one detecting unit based on a received signal quantity at another detecting unit and a type of filter above at least one of the detecting units.
2. The solid-state image capturing device according to claim 1 , wherein an active region where the first type dopant is subjected to modulation doping, whereby the deeper from the surface, the lower the concentration of said dopant.
3. The solid-state image capturing device according to claim 2 , comprising:
wherein both detecting units are subjected to said modulation doping.
4. The solid-state image capturing device according to claim 2 , wherein a second electroconductive type dopant is formed such that a peak position of concentration of said second electroconductive type dopant is deeper than a peak position of concentration of said first electroconductive type dopant.
5. An image capturing device comprising:
a first detecting unit configured to detect a first wavelength component; and
a second detecting unit configured to detect a second wavelength component which is longer than at least said first wavelength component;
and wherein, a first type dopant of said second detecting unit reaches a portion deeper than a dopant of said first detecting unit; and
a correction processing unit configured to subject a signal obtained at said first detecting unit to correction using a signal obtained at said second detecting unit and further wherein a signal processor modifies an output signal from at least one detecting unit based on a received signal quantity at another detecting unit and a type of filter above at least one of the detecting units.
6. The image capturing device according to claim 5 , wherein at least a first type dopant that is formed in the depth direction is subjected to modulation doping, whereby the deeper from a substrate surface, the lower the concentration of said dopant.