Sensing circuit of a phase change memory and sensing method thereof
A sensing circuit of a phase change memory. The sensing circuit comprises a data current source and a reference current source, a storage memory device and a reference memory device, a storage switch and a reference switch, an auxiliary current source and a comparator. First terminals of the storage memory device and the reference memory device are respectively coupled to the data current source and the reference current source. The storage switch and the reference switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The auxiliary current source is dynamically coupled to the first terminals of the storage memory device and the reference memory device. The comparator is coupled to the first terminals of the storage memory device and the reference memory device.
1. A sensing circuit of a phase change memory, comprising:
a data current source and a reference current source;
a storage memory device and a reference memory device having first terminals respectively coupled to the data current source and the reference current source;
a storage switch and a reference switch respectively coupled to second terminals of the storage memory device and the reference memory device;
an auxiliary current source dynamically coupled to the first terminals of the storage memory device and the reference memory device; and
a comparator coupled to the first terminals of the storage memory device and the reference memory device.
2. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the storage memory device and the reference memory device are phase change memory devices.
3. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the auxiliary current source is coupled to the first terminal of the storage memory device or the reference memory device via a switch.
4. The sensing circuit of a phase change memory as claimed in claim 3 , wherein the switch is turned on when read process starts and turned off within a predetermined period.
5. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the storage switch and the reference switch are MOS transistors, BJTs, or diodes.