Micromechanical Hf switching element and method for the production thereof
View Patent ↗The present invention relates to a micromechanical HF switching element, in which a freestanding movable element is situated above a metallic surface on a substrate in such way that it is drawn to the metallic surface, to which a dielectric layer is applied, by applying an electrical voltage between the metallic surface and the movable element. The present invention also relates to a method for producing micromechanical HF switching elements of this type, in which the dielectric layer is deposited on the metal surface. The present method is distinguished in that a piezoelectric AlN layer having a columnar, polycrystalline structure and a texture is deposited on the metallic surface as the dielectric layer. Significantly reduced charging of the dielectric material and increased long-term stability of the switching element are achieved by the present method and the HF switching element thus produced.
1. A micromechanical high frequency (HF) switching element comprising:
a substrate;
a metallic surface, on the substrate, to which a dielectric layer including piezoelectric AlN layer having a columnar, polycrystalline structure and a texture is applied;
a freestanding movable element situated above the metallic surface on the substrate in such way that the movable element may be drawn to the metallic surface by applying an electrical voltage between the metallic surface and the movable element.
2. The micromechanical HF switching element according to claim 1 , wherein the dielectric layer has a layer thickness between 100 and 500 nm.
3. The micromechanical HF switching element according to claim 1 , wherein the metallic surface comprises platinum.
4. The micromechanical HF switching element according to claim 1 , wherein the metallic surface is a section of an HF signal line.
5. The micromechanical HF switching element according to claim 1 , wherein the movable element comprises a metallic or metallically coated diaphragm attached to spring-like suspensions above the metallic surface.
6. A method for producing micromechanical high frequency (HF) switching elements, using a capacitive and/or electrostatic action principle between a freestanding movable element and a metallic surface on a substrate, comprising:
depositing a dielectric layer including a piezoelectric AlN layer having a columnar, polycrystalline structure and a texture on the metallic surface.
7. The method according to claim 6 , wherein the dielectric layer is deposited at a layer thickness between 100 and 500 nm.
8. The method according to claim 6 , wherein the dielectric layer is sputtered on.
9. The method according to claim 6 , wherein the metallic surface comprises platinum.
10. The method according to claim 6 for producing capacitive HF switches.