Semiconductor device and automotive AC generator
A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu 6 Sn 5 content greater than a eutectic content.
1. A method of producing a semiconductor device including a semiconductor element and an electrode to which the semiconductor element is bonded,
wherein the electrode is plated with a Ni layer on the surface thereof, an interior portion of the electrode is made of a metal having a lower electrical resistivity than Ni, the method comprising the steps of:
setting a Sn-(3-7)Cu solder having a Cu 6 Sn 5 content between the semiconductor element and the Ni plated electrode; and
depositing the Cu 6 Sn 5 grains on the plated Ni layer of the electrode by heating the Sn-(3-7)Cu solder, the Cu 6 Sn 5 grains being layered on the plated Ni layer.
2. A method of producing a semiconductor device according to claim 1 ,
wherein the Sn-(3-7)Cu solder is a foil, a paste or a wire.
3. A method of producing a semiconductor device according to claim 1 ,
wherein the electrode is a printed wiring board.
4. A method of producing a semiconductor device according to claim 1 ,
wherein a surface of the semiconductor element is plated with Ni, the surface of the semiconductor element being faced to the electrode.
5. A method of producing a semiconductor device according to claim 1 , wherein the interior portion of the electrode is made of Cu.
6. A method of producing a semiconductor device including a semiconductor element, a support member bonded to a first surface of the semiconductor element, and a lead electrode bonded to a second surface of the semiconductor element supported on the support member,
wherein the support member and the lead electrode are plated with Ni on the surface thereof, an interior portion of the electrode is made of a metal having a lower electrical resistivity than Ni,
the method comprising the steps of:
setting a Sn-(3-7)Cu solder having a Cu 6 Sn 5 content between the semiconductor element and the plated Ni layer of the support member, and
depositing the Cu 6 Sn 5 grains on the Ni layer of the member and the lead electrode by heating the Sn-(3-7)Cu solder, the Cu 6 Sn 5 grains being layered on the plated Ni layer.
7. A method of producing a semiconductor device according to claim 6 , further comprising:
the step of setting a Sn-(3-7)Cu having a Cu 6 Sn 5 content between the semiconductor element and the plating Ni layer of the lead electrode.
8. A method of producing a semiconductor device according to claim 6 ,
wherein the Sn-(3-7)Cu solder is a foil, a paste or a wire.
9. A method of producing a semiconductor device according to claim 6 , wherein a surface of the semiconductor element is plated with Ni.
10. A method of producing a semiconductor device according to claim 6 , wherein the interior portion of the electrode is made of Cu.