Integrated circuit isolation system

1. A method of manufacture of an integrated circuit isolation system comprising:

providing a substrate;

forming a base insulator region having a predetermined width in the substrate;

growing the substrate to surround the base insulator region;

forming a recess to expose the base insulator region after growing the substrate; and

forming an insulator column having a width narrower than the base insulator region on the base insulator region to form a self-aligned inverted T-shaped isolation structure.

2. The method as claimed in claim 1 wherein forming the base insulator region comprises:

depositing a non-conformal insulator in a trench; and

etching back the non-conformal insulator from the sides of the trench to form a base insulator region on a bottom of the trench.

3. The method as claimed in claim 1 wherein forming the base insulator region comprises:

depositing an insulator in a trench; and

etching back the insulator from the trench across a planar surface of the insulator to form the base insulator region on a bottom of the trench.

4. The method as claimed in claim 1 wherein forming the base insulator region comprises:

performing a high dose oxygen implant in a trench; and

applying a high temperature anneal of the high dose oxygen implant to form a buried base insulator region.

5. The method as claimed in claim 1 wherein depositing the insulator column comprises filling an insulator into the recess on the base insulator region.

6. A method of manufacture of an integrated circuit isolation system comprising:

providing a silicon substrate;

forming a base oxide region having a predetermined width in the silicon substrate;

growing the silicon substrate to surround the base oxide region;

forming a recess to expose the base oxide region after growing the silicon substrate;

depositing an oxide column having a width narrower than the base oxide region in the recess to form a self-aligned inverted T-shaped isolation structure;

forming a first device on a one side of the self-aligned inverted T-shaped isolation structure system; and

forming a second device on an opposite side of the self-aligned inverted T-shaped isolation structure system.

7. The method as claimed in claim 6 wherein forming the base oxide region comprises depositing an oxide in a trench.

8. The method as claimed in claim 6 wherein forming the base oxide region comprises implanting and annealing oxygen into the silicon substrate below a trench.

9. The method as claimed in claim 6 wherein forming a recess comprises forming a nitride layer extending into a trench.

10. The method as claimed in claim 6 wherein depositing the oxide column comprises depositing an oxide attached to the base oxide region.