Processing multilayer semiconductors with multiple heat sources

1. A method for adjusting a heat transfer profile in a processing chamber, comprising:

estimating heat transfer properties of the chamber;

estimating heat absorptive properties of a substrate to be processed in the chamber;

adjusting the chamber properties based on the estimated chamber properties and the estimated substrate properties by altering the thermal mass of an edge ring supporting the substrate inside the chamber by changing at least one of the thickness of the edge ring or the density of the edge ring; and

processing the substrate in the processing chamber.

2. The method of claim 1 , wherein the edge ring comprises pressed, sintered silicon carbide containing nitrogen.

3. The method of claim 1 , wherein the edge ring comprises a ratio of edge ring thickness to substrate thickness of from about 1.14 to about 1.30.

4. The method of claim 1 , further comprising adjusting the chamber properties by altering placement of openings in a reflective surface inside the chamber.

5. The method of claim 1 , further comprising adjusting the chamber properties by varying the power supplied to lamps in the chamber.

6. A method for adjusting heat transfer properties within a processing chamber, comprising:

measuring heat transfer properties of the chamber;

measuring emissivity of a substrate to be processed in the chamber;

adjusting the chamber properties based on the measured chamber properties and the measured substrate properties by altering the thermal mass of an edge ring supporting the substrate inside the chamber by changing at least one of the thickness of the edge ring or the density of the edge ring; and

processing the substrate in the processing chamber.

7. The method of claim 6 , wherein the edge ring comprises pressed, sintered silicon carbide containing nitrogen.

8. The method of claim 6 , wherein the edge ring comprises a ratio of edge ring thickness to substrate thickness of about 1.14 to about 1.30.

9. The method of claim 6 , further comprising adjusting the chamber properties by altering placement of openings in a reflective surface inside the chamber.

10. The method of claim 6 , further comprising adjusting the chamber properties by varying power supplied to lamps in the chamber.

11. The method of claim 6 , wherein adjusting chamber properties further comprises modifying the heat transfer properties to reduce a temperature drop near the substrate edge to less than one degree Celsius.

12. A method for adjusting heat transfer properties within a processing chamber, comprising:

adjusting one or more properties of gas flows into or out of the chamber;

adjusting reflectivity of a reflective surface in the chamber;

measuring heat transfer properties of a substrate disposed on an edge ring in the chamber after adjusting the gas flows and adjusting the reflectivity; and

adjusting thermal mass of the edge ring to correct for the measured heat transfer properties of the substrate, wherein the thermal mass is altered by changing at least one of a thickness or density of the edge ring.

13. The method of claim 12 , further comprising adjusting location or material of construction for lamps within the chamber and lamp power to obtain a desired temperature profile.

14. The method of claim 12 , wherein the edge ring comprises pressed, sintered silicon carbide containing nitrogen.

15. The method of claim 12 , wherein the edge ring comprises a ratio of edge ring thickness to substrate thickness of about 1.14 to about 1.30.

16. The method of claim 12 , wherein the reflectivity of the reflective surface is adjusted by altering placement of openings in the reflective surface.

17. The method of claim 12 , wherein the properties of gas flows comprise location, volume, contents, and pressure.

18. The method of claim 17 , wherein the chamber is adjusted to reduce a temperature drop near the substrate edge to less than one degree Celsius.