Fabricating a gallium nitride device with a diamond layer

1. A method, comprising:

fabricating a device comprising:

a gallium nitride (GaN) layer;

a first diamond layer disposed on the GaN layer; and

a gate structure disposed in contact with the GaN layer and the first diamond layer,

wherein the fabricating comprises:

depositing a first diamond layer onto a first surface of the GaN; and

disposing a second diamond layer onto a second surface of the GaN layer opposite the first surface of the GaN layer.

2. The method of claim 1 wherein the depositing comprises depositing the diamond layer onto the GaN layer using a microwave plasma chemical vapor deposition (CVD).

3. The method of claim 1 wherein the depositing comprises depositing a diamond layer that is greater than 1,000 Angstroms.

4. The method of claim 1 wherein disposing a second diamond layer onto a second surface of the GaN layer opposite the first surface of the GaN layer comprises attaching to the second surface of the GaN layer a second diamond layer having a first thermal conductivity and a third diamond layer disposed thereto having a second thermal conductivity greater than the first thermal conductivity.

5. The method of claim 1 wherein fabricating a device comprising the GaN layer comprises fabricating a device comprising a GaN layer comprising at least one of undoped GaN, doped GaN or GaN combined with another element.

6. The method of claim 1 wherein fabricating a device comprises fabricating one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.

7. A method comprising:

disposing a diamond layer onto a first surface of gallium nitride (GaN);

removing a portion of the diamond layer exposing the first surface of the GaN;

forming a gate structure in contact with the first surface of the GaN and the diamond layer; and

attaching a second diamond layer to a second surface of the GaN opposite the first surface of the GaN.

8. The method of claim 7 , further comprising fabricating at least one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device from the diamond/GaN structure.

9. The method of claim 7 wherein removing a portion of the diamond layer exposing the GaN surface comprises removing a portion of the diamond layer using oxygen plasma.

10. The method of claim 7 wherein disposing a diamond layer comprises depositing a diamond layer.

11. The method of claim 10 , further comprising performing an ultrasound on the GaN immersed in a solution comprising nano-diamond particles prior to depositing the diamond layer.

12. The method of claim 7 , further comprising:

growing GaN on a first substrate;

disposing a layer of material onto the GaN; and

removing the first substrate.

13. The method of claim 12 wherein growing GaN on a first substrate comprises growing GaN on one of silicon carbide, silicon or sapphire.

14. The method of claim 12 wherein disposing a layer of material onto the GaN comprises disposing one of a silicon layer or a glass layer.

15. The method of claim 12 , further comprising removing the layer of material to form a diamond/GaN structure.