Semiconductor device
A semiconductor device is disclosed. One aspect provides a semiconductor device that includes a semiconductor chip including a first face and a second face opposite the first face, an encapsulant including inorganic particles encapsulating the semiconductor chip, a first metal layer attached to the first face of the semiconductor chip, a second metal layer attached the second face of the semiconductor chip, and electrically conducting material configured to connect the first metal layer with the second metal layer.
1. A semiconductor device, comprising:
a semiconductor chip comprising a first face and a second face opposite the first face, the semiconductor chip having a first coefficient of thermal expansion;
an encapsulant comprising inorganic particles encapsulating the semiconductor chip, the encapsulant having a second coefficient of thermal expansion;
a first metal layer attached to the first face of the semiconductor chip;
a second metal layer attached to the second face of the semiconductor chip; and
electrically conducting material configured to connect the first metal layer with the second metal layer;
wherein the first coefficient of expansion and the second coefficient of expansion are of the same order of magnitude.
2. The semiconductor device of claim 1 , wherein the encapsulant additionally comprises organic material.
3. The semiconductor device of claim 1 , wherein the encapsulant comprises ceramic glass.
4. The semiconductor device of claim 1 , wherein the first metal layer laterally extends over the semiconductor chip and the encapsulant.
5. The semiconductor device of claim 1 , wherein the second metal layer laterally extends over the semiconductor chip and the encapsulant.
6. The semiconductor device of claim 1 , wherein the chips have a first electrode on the first face and a second electrode on the second face.
7. The semiconductor device of claim 6 , wherein the first electrode is electrically connected with the first metal layer.
8. The semiconductor device of claim 7 , wherein the second electrode is electrically connected with the second metal layer.
9. The semiconductor device of claim 8 , wherein the electrically conducting material is structured to extend from the first metal layer to the second metal layer.
10. The semiconductor device of claim 1 , wherein the semiconductor chip comprises a power transistor with a first electrode connected with a drain and a second electrode connected with a source.
11. The semiconductor device of claim 1 , wherein first coefficient of thermal expansion is approximately 2.5×10 −6 /K.
12. The semiconductor device of claim 1 , wherein second coefficient of thermal expansion is less than approximately 10×10 −6 /K.
13. A semiconductor device, comprising:
a semiconductor chip comprising an active surface opposite a back surface;
an encapsulant comprising sintered particles encapsulating sides of the semiconductor chip;
a first metal layer attached to a first contact on the active surface of the semiconductor chip;
a separate second metal layer attached to a second contact on the active surface of the semiconductor chip; and
electrically conducting material extending between the first metal layer and the back surface and between the separate second metal layer and the back surface.
14. The semiconductor device of claim 13 , wherein the encapsulant encapsulates a portion of the active surface.
15. The semiconductor device of claim 13 , wherein the encapsulant is disposed between the sides of the semiconductor chip and the electrically conducting material.
16. The semiconductor device of claim 13 , wherein the back surface of the semiconductor chip comprises a metallized backside.