IP Library › Granted Patent US 8,002,998
Granted Patent B2
US 8,002,998 · App. 11/842,277 · Granted Aug 23, 2011

Method of producing a slab type two-dimensional photonic crystal structure

Assignee: NGK Insulators, Ltd.
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Quick Facts
Patent No.
US 8,002,998
App. No.
11/842,277
Granted
Aug 23, 2011
Kind
B2
Abstract

A first main face of a substrate of a dielectric single crystal is etched to form recesses in the substrate. A second main face of the substrate is mechanically processed to form a slab, so that the recesses pass through the substrate to form through holes.

Claims (9)

1. A method of producing a slab type two-dimensional photonic crystal structure comprising a slab of a dielectric single crystal and a lattice column comprising through holes; said method comprising the steps of:

forming recesses in a substrate of a dielectric single crystal by etching a first main face of said substrate of said dielectric single crystal;

forming a guard film on a portion of a first main face of a base body and a supporting film on the remainder of said first main face of said base body;

then joining said guard film and said supporting film on said base body to said first main face of said substrate through an adhesive layer; and

then forming a slab by grinding a second main face of said substrate so that said recesses pass through said slab to form said through holes.

2. The method of claim 1 , further comprising the step of filling a dielectric material into said through holes to form dielectric pillars.

3. The method of claim 1 , further comprising forming lattice columns in said slab of said dielectric single crystal by filling said recesses in said substrate with a dielectric material, said slab type two dimensional photonic crystal comprising said slab of said dielectric single crystal and said lattice columns.

4. The method of claim 3 , further comprising removing said supporting film from said first main face of said base body after forming said slab of said dielectric single crystal, said slab type two dimensional photonic crystal comprising said slab of said dielectric single crystal and said lattice columns having spaces under and over said slab of said dielectric single crystal.

5. The method of claim 1 , further comprising forming a metal layer on said first main face of said substrate, forming a resist on said metal layer, and etching said resist, said metal layer, and said first main face of said substrate to form said recesses on said first main face of said substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2007
From: IWATA, YUICHI; MITOMI, OSAMU; KONDO, JUNGO; AOKI, KENJI; YOSHINO, TAKASHI; HAMAJIMA, AKIRA
To: NGK INSULATORS, LTD.
Reel/Frame 019721/0876 →
Priority Claims (1)
JP 2006-229210 · Aug 25, 2006 · national
Continuity (1)
Related Publication 20080047928A1 · Feb 28, 2008