Dielectric ceramic composition and electronic device
The present invention relates to a dielectric ceramic composition comprising a main component expressed by a general formula: (Ba 1-x-y Sr x Ca y ) m (Ti 1-z Zr z )O 3 , a first subcomponent comprising Mg oxide, a second subcomponent comprising at least one kind of oxide selected from oxides of Mn and Cr, a third subcomponent comprising R oxide (note R is selected at least one kind from Y, La Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho and Yb), and a fourth subcomponent comprising an oxide including Si.
1. A dielectric ceramic composition comprising:
a main component expressed by a general formula:
(Ba 1-x-y Sr x Ca y ) m (Ti 1-z Zr z )O 3 ,
a first subcomponent comprising Mg oxide,
a second subcomponent comprising at least one oxide selected from oxides of Mn and Cr,
a third subcomponent comprising R oxide, wherein R is selected from at least one of Y, La Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Yb, and
a fourth subcomponent comprising an oxide including Si,
wherein the general formula shows
0.20≦x≦0.40,
0≦y≦0.20,
0≦z≦0.30, and
0.950≦m≦1.050,
wherein ratios of the respective subcomponents with respect to 100 moles of said main component are
the first subcomponent: 0.5 to 5 moles (in terms of element),
the second subcomponent: 0.05 to 2 moles (in terms of element),
the third subcomponent: 1 to 8 moles (in terms of element),
the fourth subcomponent: 0.5 to 5 moles (in terms of an oxide or a complex oxide), and
within a temperature range of −25 to 105° C., a capacitance change rate on the basis of capacitance at 25° C., with respect to slope “a” of a line which shows capacity temperature characteristic on the basis of capacitance at 25° C., is within −15 to +5%, and said slope “a” is −7000 to −3000 ppm/° C.
2. The dielectric ceramic composition as set forth in claim 1 ,
wherein y and z in the general formula of the main component are 0.
3. The dielectric ceramic composition as set forth in claim 1 further comprising:
a fifth subcomponent comprising at least one oxide selected from oxides of V, Mo, W, Ta, and Nb,
wherein a ratio of the fifth subcomponent with respect to 100 moles of said main component is 0 to 0.2 moles in terms of each element.
4. The dielectric ceramic composition as set forth in claim 2 further comprising:
a fifth subcomponent comprising at least one oxide selected from oxides of V, Mo, W, Ta, and Nb,
wherein a ratio of the fifth subcomponent with respect to 100 moles of said main component is 0 to 0.2 moles in terms of each element.
5. An electronic device comprising dielectric layers composed of the dielectric ceramic composition as set forth in claim 1 .
6. An electronic device comprising dielectric layers composed of the dielectric ceramic composition as set forth in claim 2 .
7. An electronic device comprising dielectric layers composed of the dielectric ceramic composition as set forth in claim 3 .
8. An electronic device comprising dielectric layers composed of the dielectric ceramic composition as set forth in claim 4 .