Capacitively coupled plasma reactor
A capacitively coupled plasma reactor includes a plasma reactor, a capacitive coupling electrode assembly including a plurality of capacitive coupling electrodes to induce plasma discharge inside the plasma reactor, a main power supply source to supply radio-frequency power, and a distribution circuit to receive the radio-frequency power supplied from the main power supply source and to distribute the received radio-frequency power to the plurality of capacitive coupling electrodes.
1. A capacitively coupled plasma reactor comprising:
a plasma reactor;
a capacitive coupling electrode assembly including a plurality of capacitive coupling electrodes, to induce plasma discharge inside the plasma reactor;
a main power supply source to supply radio-frequency power; and
a distribution circuit to receive the radio-frequency power supplied from the main power supply source and to distribute the received radio-frequency power to the plurality of capacitive coupling electrodes,
wherein the distribution circuit comprises a current balance circuit, and
wherein the current balance circuit comprises a plurality of transformers.
2. The capacitively coupled plasma reactor according to claim 1 , further comprising:
an impedance matching device positioned between the main power supply source and the distribution circuit, to perform impedance matching.
3. The capacitively coupled plasma reactor according to claim 1 , wherein the current balance circuit is adapted to control balance of a current supplied to the plurality of capacitive coupling electrodes.
4. The capacitively coupled plasma reactor according to claim 3 , wherein the current balance circuit parallel drives the plurality of capacitive coupling electrodes, and
the plurality of transformers balance the current.
5. The capacitively coupled plasma reactor according to claim 4 , wherein the plurality of transformers have first sides connected in series between a ground and a power input terminal in which the radio-frequency is input, and second sides connected to the plurality of corresponding capacitive coupling electrodes.
6. The capacitively coupled plasma reactor according to claim 5 , wherein the second sides of the plurality of transformers each comprise grounded center tabs, one end of each second side outputs a positive voltage and the other end thereof outputs a negative voltage, and the positive voltage is provided to a positive voltage electrode of the plurality of capacitive coupling electrodes and the negative voltage is provided to a negative voltage electrode of the plurality of capacitive coupling electrodes.
7. The capacitively coupled plasma reactor according to claim 3 , wherein the current balance circuit comprises a voltage level control circuit capable of varying a current balance control range.
8. The capacitively coupled plasma reactor according to claim 3 , wherein the current balance circuit comprises a compensation circuit to compensate a leakage current.
9. The capacitively coupled plasma reactor according to claim 3 , wherein the current balance circuit comprises a protection circuit to prevent any damage by an excessive voltage.
10. The capacitively coupled plasma reactor according to claim 1 , wherein the plurality of capacitive coupling electrodes comprise a conductive region and an insulating region.
11. The capacitively coupled plasma reactor according to claim 1 , wherein the capacitive coupling electrode assembly comprises an insulating layer positioned between the plurality of capacitive coupling electrodes.
12. The capacitively coupled plasma reactor according to claim 1 , wherein the capacitive coupling electrode assembly comprises an electrode mounting plate on which the plurality of capacitive coupling electrodes are mounted.
13. The capacitively coupled plasma reactor according to claim 12 , wherein the electrode mounting plate comprises a plurality of gas injection holes and a gas supply unit to supply a gas to the inside of the plasma reactor through the gas injection holes.
14. The capacitively coupled plasma reactor according to claim 1 , wherein the plasma reactor comprises a supporting bed inside, and the supporting bed on which a substrate to be processed is placed is biased or not biased.
15. The capacitively coupled plasma reactor according to claim 14 , wherein the supporting bed is biased by a single frequency power or two or more different frequency power.
16. The capacitively coupled plasma reactor according to claim 14 , wherein the supporting bed comprises an electrostatic chuck.
17. The capacitively coupled plasma reactor according to claim 14 , wherein the supporting bed comprises a heater.
18. The capacitively coupled plasma reactor according to claim 1 , wherein the plurality of capacitive coupling electrodes comprises a plurality of positive voltage electrodes and a plurality of negative voltage electrodes, and the positive voltage electrodes and the negative voltage electrodes have one or more array structures selected from a mutually alternating linear array structure, a matrix-type array structure, a mutually alternating spiral array structure and a mutually alternating concentric array structure.
19. The capacitively coupled plasma reactor according to claim 18 , wherein the positive voltage electrodes and the negative voltage electrodes have one or more structures selected form a barrier-type structure, a flat plate-type structure, a protrusion-type structure, a cylindrical post-type structure, a ring-shape structure, a spiral structure and a linear structure.
20. A capacitively coupled plasma reactor comprising:
a first plasma reactor;
a second plasma reactor;
a first capacitive coupling electrode assembly including a plurality of capacitive coupling electrodes, to induce plasma discharge inside the first plasma reactor;
a second capacitive coupling electrode assembly including a plurality of capacitive coupling electrodes, to induce plasma discharge inside the second plasma reactor;
a main power supply source to supply radio-frequency power; and
a distributor circuit to receive the radio-frequency power supplied from the main power supply source and to distribute the received radio-frequency power to the plurality of capacitive coupling electrodes of the first and second capacitive coupling electrode assemblies,
wherein the distributor circuit comprises a current balance circuit, and
wherein the current balance circuit comprises a plurality of transformers.
21. The capacitively coupled plasma reactor according to claim 20 , further comprising:
an impedance matching device positioned between the main power supply source and the distributor circuit, to perform impedance matching.
22. The capacitively coupled plasma reactor according to claim 20 , wherein the current balance circuit controls a balance of a current supplied to the plurality of capacitive coupling electrodes of the first and second capacitive coupling electrode assemblies.
23. The capacitively coupled plasma reactor according to claim 22 ,
wherein the current balance circuit parallel drives the plurality of capacitive coupling electrodes of the first and second capacitive coupling electrode assemblies, and
the plurality of transformers balance the current.
24. The capacitively coupled plasma reactor according to claim 23 , wherein the plurality of transformers have first sides connected in series between a ground and a power input terminal in which the radio-frequency is input, and second sides connected to the plurality of corresponding capacitive coupling electrodes of the first and second capacitive coupling electrode assemblies.
25. The capacitively coupled plasma reactor according to claim 24 , wherein the second sides of the plurality of transformers each comprise grounded center tabs, one end of each second side outputs a positive voltage and the other end thereof outputs a negative voltage, and the positive voltage is provided to a positive voltage electrode of the plurality of capacitive coupling electrodes and the negative voltage is provided to a negative voltage electrode of the plurality of capacitive coupling electrodes.
26. The capacitively coupled plasma reactor according to claim 22 , wherein the current balance circuit comprises a voltage level control circuit capable of varying a current balance control range.
27. The capacitively coupled plasma reactor according to claim 22 , wherein the current balance circuit comprises a compensation circuit to compensate a leakage current.
28. The capacitively coupled plasma reactor according to claim 22 , wherein the current balance circuit comprises a protection circuit to prevent any damage by an excessive voltage.
29. The capacitively coupled plasma reactor according to claim 20 , wherein the plurality of capacitive coupling electrodes comprise a conductive region and an insulating region.
30. The capacitively coupled plasma reactor according to claim 20 , wherein each of the first and second capacitive coupling electrode assembly comprises an insulating layer positioned between the capacitive coupling electrodes.
31. The capacitively coupled plasma reactor according to claim 20 , wherein each of the first and second capacitive coupling electrode assemblies comprises an electrode mounting plate on which the plurality of capacitive coupling electrodes are mounted.
32. The capacitively coupled plasma reactor according to claim 31 , wherein the electrode mounting plate of each of the first and second capacitive coupling electrode assemblies comprises a plurality of gas injection holes and a gas supply unit to supply a gas to the inside of each of the first and second plasma reactors through the gas injection holes.
33. The capacitively coupled plasma reactor according to claim 32 , wherein the gas supply unit comprises a plurality of gas supply conduits.
34. The capacitively coupled plasma reactor according to claim 33 , wherein each of the gas supply conduits comprises a control valve to independently control gas supply flux.
35. The capacitively coupled plasma reactor according to claim 20 , wherein each of the first and second plasma reactors comprises a supporting bed inside, and the supporting bed on which a substrate to be processed is placed is biased or not biased.
36. The capacitively coupled plasma reactor according to claim 35 , wherein the supporting bed is biased by a single frequency power or two or more different frequency power.
37. The capacitively coupled plasma reactor according to claim 36 , wherein the supporting bed comprises a heater.
38. The capacitively coupled plasma reactor according to claim 35 , wherein the supporting bed comprises an electrostatic chuck.
39. The capacitively coupled plasma reactor according to claim 20 , wherein the plurality of capacitive coupling electrodes comprises a plurality of positive voltage electrodes and a plurality of negative voltage electrodes, and the positive voltage electrodes and the negative voltage electrodes have one or more array structures selected from a mutually alternating linear array structure, a matrix-type array structure, a mutually alternating spiral array structure and a mutually alternating concentric array structure.
40. The capacitively coupled plasma reactor according to claim 39 , wherein the positive voltage electrodes, and the negative voltage electrodes have one or more structures selected form a barrier-type structure, a flat plate-type structure, a protrusion-type structure, a cylindrical post-type structure, a ring-shape structure, a spiral structure and a linear structure.