Method for continuity test of integrated circuit
The present invention provides a method for continuity test of integrated circuit. By using both pins of integrated circuit to measure a current of an electrostatic discharge device, the contact resistance of the integrated circuit can be obtained by calculating. The method comprises the steps: First, a DUT (device under test) is provided, and the DUT includes a second pin and the second pin connecting zero reference potential. Then, a voltage is applied to a first pin of DUT. Finally, the current through said first pin and said second pin would be measured. Therefore, the testing result of the DUT could be more precise and the quality of the DUT would be made sure.
1. A method for improving the sensitivity and accuracy of continuity testing an integrated circuit, comprising:
providing a device under test, which comprises an electrostatic discharge device;
connecting a second pin of said device under test to a zero reference potential;
providing a voltage to a first pin of said device under test to reversely bias said electrostatic discharge device to result in a breakdown current, wherein said voltage is more than the threshold voltage of said electrostatic discharge device; and
measuring said breakdown current of said electrostatic discharge device between the first pin and the second pin;
whereby a test circuit with improved sensitivity and accuracy is formed after applying said voltage to said device under test.
2. The method of claim 1 , wherein the value of said voltage is determined by the threshold voltage of said electrostatic discharge device plus about 0.2 volts.
3. The method of claim 2 , wherein the threshold voltage of said electrostatic discharge device is about 0.7 volts.
4. The method of claim 1 , wherein said device under test comprises memory, system on chip, driver chip of LCD, charge coupled device, mixed signal IC, or RF IC.
5. The method of claim 1 , further comprising to use the value of said voltage divided by said breakdown current to obtain a contact resistance of said device under test.
6. The method of claim 1 , wherein said breakdown current is milliampere (mA) level.
7. A method for improving the sensitivity and accuracy of measurement of contact resistance of an integrated circuit, comprising:
providing a device under test, which comprises an electrostatic discharge device;
connecting a second pin of said device under test to a zero reference potential;
providing a voltage to a first pin of said device under test to reversely bias said electrostatic discharge device to result in a breakdown current, wherein said voltage is more than the threshold voltage of said electrostatic discharge device;
measuring said breakdown current of said electrostatic discharge device between the first pin and the second pin; and
utilizing said current and said voltage to obtain a contact resistance of said device under test.
8. The measuring method of claim 7 , wherein said voltage is determined by the threshold voltage of said electrostatic discharge device plus about 0.2 volts.
9. The measuring method of claim 8 , wherein the threshold voltage of said device under test is about 0.7 volts.
10. The measuring method of claim 7 , wherein a test circuit is formed after applying said voltage to said device under test.
11. The measuring method of claim 7 , wherein said device under test comprises memory, system on chip, driver chip of LCD, charge coupled device, mixed signal IC, or RF IC.
12. The measuring method of claim 7 , wherein said voltage dividing by said breakdown current equals said contact resistance.
13. The measuring method of claim 7 , wherein said breakdown current is milliampere (mA) level.