Semiconductor memory device
The sense amplifier detects and amplifies a signal read via bit lines from the ferroelectric capacitor of the memory cell. The dummy capacitor provides a reference voltage to bit lines. The dummy capacitor includes a first dummy capacitor and a second dummy capacitor. The first dummy capacitor is provided with a first dummy plate potential at one end to set the reference voltage to a certain potential. The other end is connected to the bit line. The second dummy capacitor is provided with a second dummy plate potential at one end to fine-tune the reference voltage from the certain potential. The other end thereof is connected to the bit line.
1. A semiconductor memory device comprising:
a memory cell array comprising memory cells, each of the memory cells comprising a cell transistor and a ferroelectric capacitor;
a sense amplifier circuit configured to detect and amplify a signal read from the ferroelectric capacitor via a bit line pair; and
a dummy capacitor configured to provide a reference voltage to the bit line pair, the dummy capacitor further comprising:
a first dummy capacitor comprising a first end with a first dummy plate potential configured to set the reference voltage to a predetermined voltage, and a second end configured to connect to the bit line pair; and
a second dummy capacitor comprising a first end with a second dummy plate potential configured to fine-tune the reference voltage from the predetermined voltage and a second end configured to connect to the bit line pair,
wherein a capacitance of the first dummy capacitor is larger than a capacitance of the second dummy capacitor.
2. The semiconductor memory device of claim 1 , wherein the dummy capacitor is a paraelectric capacitor.
3. The semiconductor memory device of claim 2 , wherein
the second dummy capacitor is provided per batch portion from which data is read; and
the first dummy capacitor is shared by a plurality of the batch portions.
4. The semiconductor memory device of claim 3 , wherein a fuse circuit for adjusting the second dummy plate potential is provided per batch portion from which data is read.
5. The semiconductor memory device of claim 1 , wherein
the second dummy capacitor is provided per batch portion from which data is read; and
the first dummy capacitor is shared by a plurality of the batch portions.
6. The semiconductor memory device of claim 1 , wherein a fuse circuit for adjusting the second dummy plate potential is provided per batch portion from which data is read.
7. The semiconductor memory device of claim 1 , further comprising:
a first dummy plate line drive circuit configured to supply the first dummy plate potential to the first dummy capacitor; and
a second dummy plate line drive circuit configured to supply the second dummy plate potential to the second dummy capacitor.
8. The semiconductor memory device of claim 7 , wherein
the second dummy plate line drive circuit is provided per batch portion from which data is read; and
the first dummy plate line drive circuit is shared by a plurality of the batch portions.
9. The semiconductor memory device of claim 8 , wherein the second dummy plate line drive circuit comprises a fuse circuit for adjusting the second dummy plate potential.
10. The semiconductor memory device of claim 9 , wherein the fuse circuit is located outside of the memory cell array.
11. The semiconductor memory device of claim 7 , wherein the second dummy plate line drive circuit is configured to switch the second dummy plate potential to either:
a signal having the same phase as the first dummy plate potential;
a reversed signal of the first dummy plate potential; or
a ground potential.
12. The semiconductor memory device of claim 7 , wherein the dummy capacitor comprises a paraelectric capacitor.