Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.
1. A nitride semiconductor light-emitting device comprising: a plurality of structured portions, each of the structured portions including an n-type semiconductor layer provided on a lower side, and a p-type semiconductor layer provided on an upper side, an active layer between the n-type semiconductor layer and the p-type semiconductor layer, and an n-electrode; and
wherein each of the structured portions has at least an inclined side surface at which a side surface of the n-type semiconductor layer is exposed and a lower surface with a larger width than a width of the upper side thereof in sectional view, and the n-electrode has a plurality of contact portions disposed on the side surface of the n-type semiconductor layer in each of the structured portions.
2. The nitride semiconductor light-emitting device according to claim 1 , wherein the n-electrode surrounds each of the structured portions.
3. The nitride semiconductor light-emitting device according to claim 1 , further comprising a substrate, and the plurality of the structured portions being disposed on the substrate;
wherein the n-electrode continuously extends to the lower surface of the substrate through the side surfaces of the substrate.
4. The nitride semiconductor light-emitting device according to claim 1 , wherein each of the structured portions has at least one of a circular shape and a rectangular shape.
5. The nitride semiconductor light-emitting device according to claim 1 , wherein each of the structured portions has at least one of a hexagonal shape and a polygonal shape.
6. The nitride semiconductor light-emitting device according to claim 1 , wherein the structured portions are respectively spaced away from each other, and the n-electrode has an interconnect portion extended from the contact portions, and the contact portions are connected to each other with the interconnect portion therebetween.
7. The nitride semiconductor light-emitting device according to claim 6 , wherein the structured portions have respective p-electrodes in ohmic contact with the respective p-type semiconductor layers, and the p-electrodes are connected to each other.
8. The nitride semiconductor light-emitting device according to claim 1 , further comprising a reflection layer covering the structured portions.
9. The nitride semiconductor light-emitting device according to claim 8 , wherein the reflection layer is a metal layer covering the structured portions with an insulating layer therebetween.
10. The nitride semiconductor light-emitting device according to claim 9 , wherein the metal layer serves as a connecting electrode for connecting p-electrodes of p-type semiconductor layers of the structured portions.
11. The nitride semiconductor light-emitting device according to claim 8 , wherein the reflection layer comprises a dielectric multilayer film.
12. The nitride semiconductor light-emitting device according to claim 1 , wherein the inclined side surface has a convex surface protuberating outward.
13. A nitride semiconductor light-emitting device comprising: a plurality of structured portions, each of the structured portions including an n-type semiconductor layer provided on a lower side, and a p-type semiconductor layer provided on an upper side, an active layer between the n-type semiconductor layer and the p-type semiconductor layer, and an n-electrode; and
wherein each of the structured portions has at least an inclined side surface with a side surface of the n-type semiconductor layer forming a portion of the inclined side surface of each of the structured portions and a lower surface with a larger width than a width of the upper side thereof in sectional view, and the n-electrode has a plurality of contact portions disposed on the side surface of the n-type semiconductor layer in each of the structured portions.
14. The nitride semiconductor light-emitting device according to claim 13 , wherein a portion of the n-electrode surrounds a portion of the side surface of the n-type semiconductor layer of each of the structured portions.
15. The nitride semiconductor light-emitting device according to claim 13 , further comprising a substrate, and the plurality of the structured portions being disposed on the substrate;
wherein the n-electrode continuously extends to the lower surface of the substrate by extending along the side surfaces of the substrate.
16. The nitride semiconductor light-emitting device according to claim 13 , wherein each of the structured portions has the upper side that is at least one of a circular shape and a rectangular shape.
17. The nitride semiconductor light-emitting device according to claim 13 , wherein each of the structured portions has the upper side that is at least one of a hexagonal shape and a polygonal shape.