IP Library › Granted Patent US 8,052,791
Granted Patent B2
US 8,052,791 · App. 12/425,212 · Granted Nov 8, 2011

Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus

Assignee: Sharp Kabushiki Kaisha
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Quick Facts
Patent No.
US 8,052,791
App. No.
12/425,212
Granted
Nov 8, 2011
Kind
B2
Abstract

A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.

Claims (11)

1. A crystallization method comprising:

an illuminating step for illuminating a phase modulation element which controls light intensity of incident light;

a step for forming on an amorphous semiconductor film an image of light having a concave pattern that a light intensity distribution of a pattern in which the light intensity is minimum at a center and linearly increases toward a periphery by an image formation optical system provided at an output side of the phase modulation element is repeated at a certain amplitude; and

a step for growing crystal from a crystal nucleus which is generated at a part irradiated with light having a smallest intensity of the light intensity distribution of the concave pattern, in accordance with the increase in the light intensity,

the phase modulation element forming the light intensity distribution by a phase modulation unit string in which a plurality of phase modulation units each being optically smaller than a radius of a point spread distribution range of the image formation optical system are arranged, to form exit light haying the light intensity distribution of the concave pattern.

2. A crystallization method comprising:

an illuminating step for illuminating a phase modulation element which controls light intensity of incident light;

a step for forming on an amorphous semiconductor film an image of light having a concave pattern that a light intensity distribution of a pattern in which the light intensity is minimum at a center and linearly increases toward a periphery by an image formation optical system provided at an output side of the phase modulation element is repeated at a certain amplitude; and

a step for growing crystal from a crystal nucleus which is generated at a part irradiated with light having a smallest intensity of the light intensity distribution of the concave pattern, in accordance with the increase in the light intensity, and forming a predetermined light intensity distribution on a predetermined surface through the image formation optical system arranged in a light path between the phase modulation element and the predetermined surface,

the phase modulation element forming the light intensity distribution by a phase modulation unit string in which a plurality of phase modulation units each being optically smaller than a radius of a point spread distribution range of the image formation optical system are arranged, to form exit light haying the light intensity distribution of the concave pattern,

in the phase distribution of the phase modulation element, an occupied area ratio between a first region having a first phase value and a second region having a second phase value varying depending on a position.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2011
From: ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO., LTD.
To: SHARP KABUSHIKI KAISHA
Reel/Frame 026858/0705 →
Priority Claims (1)
JP 2003-117486 · Apr 22, 2003 · national
Continuity (2)
Division 10790828 · Mar 3, 2004
Related Publication 20090203231A1 · Aug 13, 2009