IP Library › Granted Patent US 8,057,536
Granted Patent B2
US 8,057,536 · App. 12/138,873 · Granted Nov 15, 2011

Implant having a surface-proximal magnesium-containing diffusion layer and associated production method

Assignee: Biotronik VI Patent AG
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Quick Facts
Patent No.
US 8,057,536
App. No.
12/138,873
Granted
Nov 15, 2011
Kind
B2
Abstract

An implant comprising an implant material forming a base made of one or more metallic elements; a diffusion layer covering the base made of at least one of the metallic elements of the implant material and at least magnesium; and, optionally, a metal layer covering the diffusion layer made of magnesium or a biocorrodible magnesium alloy.

Claims (14)

1. An implant, comprising:

(i) an implant material forming a base made of one or more metallic elements;

(ii) a diffusion layer formed by a combination comprising at least one of the metallic elements of the implant material and magnesium, whereby the diffusion layer has a gradient whereby the concentration of magnesium in the diffusion layer decreases from the exterior of the diffusion layer toward the interior of the base; and

(iii) a metallic layer covering the diffusion layer, the metallic layer comprising either magnesium or a biocorrodible magnesium alloy.

2. The implant of claim 1 , wherein the diffusion layer contains pores.

3. The implant of claim 2 , wherein the pores have an average pore size of 10 nm to 10 μm.

4. The implant of claim 3 , wherein the pores have an average pore size of 10 nm to 1 μm.

5. The implant of claim 3 , wherein the pores have an average pore size of 1 μm to 10 μm.

6. The implant of claim 1 , wherein the diffusion layer has a layer thickness in the range from 20 nm to 20 μm.

7. The implant of claim 1 , wherein the diffusion layer has a layer thickness in the range from 2 μm to 20 μm.

8. The implant of claim 1 , wherein the metal layer has a layer thickness in the range from 10 nm to 1 mm.

9. The implant of claim 8 , wherein the metal layer has a layer thickness in the range from 10 nm to 300 μm.

10. The implant of claim 1 , wherein the diffusion layer or the metallic layer contain zinc.

11. The implant of claim 1 , wherein implant material comprises titanium and the metallic material comprises magnesium, and wherein the diffusion layer comprises a single phase system comprising titanium and magnesium existing up to a boundary of approximately 3 atomic-% magnesium and having a gradual increase of magnesium content extending away from the base, and an area of a dual-phase system whereby titanium and magnesium exist adjacent to one another with the proportion of magnesium increasing away from the base.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2018
From: BIOTRONIK VI PATENT AG
To: BIOTRONIK AG
Reel/Frame 047166/0462 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2008
From: MUELLER, HEINZ; UGGOWITZER, PETER; LOEFFLER, JOERG
To: BIOTRONIK VI PATENT AG
Reel/Frame 021095/0087 →
Priority Claims (1)
DE 10 2007 023 284 · Jun 15, 2007 · national
Continuity (1)
Related Publication 20080312736A1 · Dec 18, 2008