Vertical-type semiconductor devices

1. A vertical-type non-volatile memory device, comprising:

an insulation layer pattern provided on a substrate, the insulation layer pattern having a linear shape that extends in a first direction on the substrate;

single-crystalline semiconductor patterns provided on the substrate to make contact with a first sidewall and a second sidewall opposite to the first sidewall of the insulation layer pattern, each of the single-crystalline semiconductor patterns being separated by the insulation layer pattern, the single-crystalline semiconductor patterns having a pillar shape that extends in a vertical direction relative to the substrate;

a tunnel oxide layer making contact with at least a portion of a sidewall of the single-crystalline semiconductor patterns, the contact portions of the tunnel oxide layer being spaced apart from one another in the vertical direction by a predetermined distance;

a charge-trapping layer and a blocking dielectric layer provided on the tunnel oxide layer;

control gate patterns provided on the blocking dielectric layer to face the sidewall of the single-crystalline semiconductor patterns, the control gate patterns having a linear shape, wherein a plurality of the control gate patterns are spaced apart from one another by a predetermined distance and are stacked in a multilayered structure; and

a plurality of the insulation interlayer patterns provided in a gap between upper and lower layers of the control gate patterns, making contact with the sidewall of the single-crystalline semiconductor patterns,

wherein the tunnel oxide layer is conformally formed on the profile of the sidewall of the single-crystalline semiconductor patterns, and upper and bottom surfaces of the insulation interlayer patterns.

2. The vertical-type non-volatile memory device of claim 1 , wherein the charge-trapping layer and blocking dielectric layer in each of the layer are conformally formed on the profile of the sidewall of the single-crystalline semiconductor patterns, and upper and bottom surfaces of the insulation interlayer patterns.

3. The vertical-type non-volatile memory device of claim 1 , wherein the single-crystalline semiconductor patterns comprises single-crystalline silicon.

4. The vertical-type non-volatile memory device of claim 1 , wherein the sum of a line width of the insulation layer pattern and line widths of two single-crystalline semiconductor patterns provided on both sides of the insulation layer pattern is substantially the same as the critical dimensions of a trench to be formed through a photolithography process.

5. The vertical-type non-volatile memory device of claim 1 , further comprising a metal silicide pattern provided on a surface of the control gate patterns to face the sidewall of the single-crystalline semiconductor patterns.

6. The vertical-type non-volatile memory device of claim 5 , wherein the metal silicide pattern comprises at least one selected from the group consisting of cobalt silicide, nickel silicide and palladium silicide.

7. A vertical-type non-volatile memory device, comprising:

an insulation layer pattern provided on a substrate, the insulation layer pattern having a linear shape that extends in a first direction on the substrate;

single-crystalline semiconductor patterns provided on the substrate to make contact with a first sidewall and a second sidewall opposite to the first sidewall of the insulation layer pattern, the single-crystalline semiconductor patterns being separated by the insulation layer pattern, the single-crystalline semiconductor patterns having a pillar shape that extends in a vertical direction relative to the substrate;

a tunnel oxide layer making contact with at least a portion of a sidewall of the single-crystalline semiconductor patterns, the contact portions of the tunnel oxide layer being spaced apart from one another in the vertical direction by a predetermined distance;

a charge-trapping layer and a blocking dielectric layer provided on the tunnel oxide layer;

control gate patterns provided on the blocking dielectric layer to face the sidewall of the single-crystalline semiconductor patterns, the control gate patterns having a linear shape, wherein a plurality of the control gate patterns are spaced apart from one another by a predetermined distance and are stacked in a multilayered structure; and

a plurality of the insulation interlayer patterns provided in a gap between upper and lower layers of the control gate patterns, making contact with the sidewall of the single-crystalline semiconductor patterns,

wherein the charge-trapping layer and blocking dielectric layer in each of the layer are conformally formed on the profile of the sidewall of the single-crystalline semiconductor patterns, and upper and bottom surfaces of the insulation interlayer patterns.

8. The vertical-type non-volatile memory device of claim 7 , wherein the tunnel oxide layer is conformally formed on the profile of the sidewall of the single-crystalline semiconductor patterns, and upper and bottom surfaces of the insulation interlayer patterns.

9. The vertical-type non-volatile memory device of claim 7 , wherein the single-crystalline semiconductor patterns comprises single-crystalline silicon.

10. The vertical-type non-volatile memory device of claim 7 , wherein the sum of a line width of the insulation layer pattern and line widths of two single-crystalline semiconductor patterns provided on both sides of the insulation layer pattern is substantially the same as the critical dimensions of the trench to be formed through a photolithography process.

11. The vertical-type non-volatile memory device of claim 7 , further comprising a metal silicide pattern provided on a surface of the control gate patterns to face the sidewall of the single-crystalline semiconductor patterns.

12. The vertical-type non-volatile memory device of claim 11 , wherein the metal silicide pattern comprises at least one selected from the group consisting of cobalt silicide, nickel silicide and palladium silicide.