Method for manufacturing memory element
View Patent ↗A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor having the conductive particles and a memory layer including the resin between the first conductor and the conductive particles is formed.
1. A method for manufacturing a memory element, comprising the steps of:
forming a first conductor;
forming a semiconductor layer over the first conductor;
placing a conductive paste over the semiconductor layer, the conductive paste comprising conductive particles, a resin, and a solvent; and
vaporizing the solvent to form a second conductor, the second conductor comprising the conductive particles and a memory layer including the resin between the first conductor and the conductive particles.
2. The method for manufacturing a memory element according to claim 1 ,
wherein the conductive paste is placed by a droplet discharge method or a printing method.
3. The method for manufacturing a memory element according to claim 1 ,
wherein the solvent is vaporized at a temperature higher than or equal to 10° C. and less than or equal to 280° C.
4. The method for manufacturing a memory element according to claim 1 ,
wherein the conductive particles are silver particles.
5. The method for manufacturing a memory element according to claim 1 ,
wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, an urea resin, an acrylic resin or a cellulose resin.
6. The method for manufacturing a memory element according to claim 1 , wherein the semiconductor layer is an inorganic semiconductor layer.
7. The method for manufacturing a memory element according to claim 1 , wherein each of the conductive particles has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm.
8. The method for manufacturing a memory element according to claim 1 , wherein a proportion of the conductive particles in the conductive paste is from 80 wt % to 95 wt %.
9. A method for manufacturing a memory element, comprising the steps of:
forming a first conductor;
forming a semiconductor layer over the first conductor;
placing a conductive paste so as to be in contact with a portion of the semiconductor layer, the conductive paste comprising conductive particles, a resin, and a solvent; and
vaporizing the solvent to form a second conductor so as to overlap with the portion of the first conductor, the second conductor comprising the conductive particles and a memory layer including the resin between the first conductor and the conductive particles.
10. The method for manufacturing a memory element according to claim 9 ,
wherein the conductive paste is placed by a droplet discharge method or a printing method.
11. The method for manufacturing a memory element according to claim 9 ,
wherein the solvent is vaporized at a temperature higher than or equal to 10° C. and less than or equal to 280° C.
12. The method for manufacturing a memory element according to claim 9 ,
wherein the conductive particles are silver particles.
13. The method for manufacturing a memory element according to claim 9 ,
wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, an urea resin, an acrylic resin or a cellulose resin.
14. The method for manufacturing a memory element according to claim 9 , wherein each of the conductive particles has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm.
15. The method for manufacturing a memory element according to claim 9 , wherein a proportion of the conductive particles in the conductive paste is from 80 wt % to 95 wt %.