Methods for fabricating passivated silicon nanowires and devices thus obtained
Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.
1. A method for fabricating an electronic arrangement, comprising:
providing one or more nanoscale pillars;
coating the one or more nanoscale pillars with an insulator;
depositing a first conductive layer on the insulator;
coating a portion of the first conductive layer with a dielectric;
removing an end portion of the first conductive layer and the insulator, thereby making electrically accessible a portion of the one or more nanoscale pillars; and
depositing a second conductive layer on the dielectric, the second conductive layer contacting the electrically accessible portion of the one or more nanoscale pillars.
2. The method of claim 1 , wherein the one or more nanoscale pillars are located on a substrate.
3. The method of claim 2 , wherein a side opposite the nanoscale pillars on the substrate is coated with a conductive backside contact.
4. The method of claim 1 , wherein the insulator is an oxide insulator.
5. The method of claim 4 , wherein the first conductive layer acts as a gate of the electronic arrangement.
6. The method of claim 5 , wherein gate material is chosen to exhibit a plasmon resonance coinciding with a band gap energy of the one or more nanoscale pillars.
7. The method of claim 1 , wherein the electronic arrangement comprises one or more metal-oxide-semiconductor (MOS) structures, the first conductive layer acting as the metal of the one or more MOS structures, the insulator acting as the oxide of the one or more MOS structures, and the nanoscale pillar acting as the semiconductor of the one or more MOS structures.
8. The method of claim 7 , wherein the one or more MOS structures are vertically oriented MOS structures, wherein each of the metal, oxide, and semiconductor of the one or more MOS structures extend in a vertical direction.
9. The method of claim 8 , wherein the electronic arrangement comprises one or more field-effect transistors (FETs).
10. The method of claim 9 , wherein the one or more nanoscale pillars act as a source or drain of the one or more FETs.
11. The method of claim 1 , wherein the one or more nanoscale pillars comprise light emitting nanoscale pillars.
12. The method of claim 11 , wherein the light is a visible light.
13. The method of claim 12 , wherein the nanoscale pillar acts as an opto-electronic switch.
14. A method for fabricating an electronic arrangement, comprising:
providing one or more nanoscale pillars;
coating the one or more nanoscale pillars with an insulator;
coating the insulator with a dielectric;
removing an end portion of the insulator, thereby making electrically accessible a portion of the one or more nanoscale pillars; and
depositing a conductive layer on the dielectric, the conductive layer contacting the electrically accessible portion of the one or more nanoscale pillars.
15. A method for fabricating an electronic arrangement, comprising:
providing one or more nanoscale pillars;
coating the one or more nanoscale pillars with an insulator;
removing the insulator portion in contact with the nanoscale pillar;
coating remaining insulator portion and an exposed portion of the nanoscale pillar with a first conductive layer;
coating the conductive layer with a dielectric;
removing an end portion of the first conductive layer, thereby making electrically accessible a portion of the one or more nanoscale pillars; and
depositing a second conductive layer on the dielectric, the second conductive layer contacting the electrically accessible portion of the one or more nanoscale pillars.
16. A method of claim 15 , wherein the first conductive layer acts as a gate of the electronic arrangement.
17. A method of claim 15 , wherein the electronic arrangement comprises one or more metal-semiconductor (MES) structures, the first conductive layer acting as the metal of the one or more MES structures and the nanoscale pillar acting as the semiconductor of the one or more MES structures.
18. The method of claim 17 , wherein the one or more MES structures are vertically oriented MES structures, wherein each of the metal and semiconductor or the one or more MES structures extend in a vertical direction.
19. The method of claim 18 , wherein the electronic arrangement comprises one or more field-effect transistors (FETs).