IP Library Granted Patent US 8,105,953
Granted Patent B2
US 8,105,953 · App. 13/191,046 · Granted Jan 31, 2012

Method of manufacturing a semiconductor device

Assignee: Renesas Electronics Corporation
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Quick Facts
Patent No.
US 8,105,953
App. No.
13/191,046
Granted
Jan 31, 2012
Kind
B2
Abstract

A semiconductor manufacturing apparatus includes a chamber, a gas supplier, a vacuum pump, an electrode, a conductive knitted wire mesh and a radio frequency power supply. The electrode is placed outside of the chamber and fixed to the chamber. The gas supplier supplies gas into the chamber. The vacuum pump exhausts the chamber. The radio frequency power supply supplies radio frequency power to the electrode through the conductive knitted wire mesh.

Claims (4)

1. A manufacturing method of a semiconductor device, comprising:

supplying gas into a chamber exhausted by a vacuum pump;

generating plasma in said chamber by supplying radio frequency power through a conductive knitted wire mesh to an electrode which is placed outside of said chamber and fixed to said chamber; and

processing a to-be-processed material by using said plasma.

Assignments (3)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2011
From: TAKEHARA, KEIICHIROU
To: NEC ELECTRONICS CORPORATION
Reel/Frame 026673/0733 →
CHANGE OF NAME Recorded Jul 29, 2011
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 026673/0889 →
Priority Claims (1)
JP 2007-098102 · Apr 4, 2007 · national
Continuity (2)
Division 12062731 · Apr 4, 2008
Related Publication 20110281437A1 · Nov 17, 2011