Semiconductor circuit with amplifier, bond wires and inductance compensating bond wire
In one embodiment of the present invention, a semiconductor circuit including an amplifier disposed on a semiconductor substrate is disclosed. A first bond wire coupled to an input of the amplifier, a second bond wire coupled to an output of the amplifier, and a third bond wire coupled in series with the first bond wire. A third bond wire is disposed on the semiconductor substrate so that a mutual inductance between the second bond wire and the third bond wire at least partially cancels a mutual inductance between the first bond wire and the second bond wire.
1. A semiconductor circuit comprising:
an amplifier disposed on a semiconductor substrate;
a first bond wire coupled to an input of the amplifier;
a second bond wire coupled to an output of the amplifier; and
a third bond wire coupled in series with the first bond wire, wherein a mutual inductance between the second bond wire and the third bond wire at least partially cancels a mutual inductance between the first bond wire and the second bond wire, wherein a first end of the third bond wire is bonded to a first bonding pad disposed on the semiconductor substrate, and a second end of the third bond wire is bonded to a second bonding pad disposed on the semiconductor substrate.
2. The semiconductor circuit of claim 1 , wherein a first end of the first bond wire is coupled to a lead frame.
3. The semiconductor circuit of claim 2 , wherein a first end of the second bond wire is coupled to the lead frame.
4. The semiconductor circuit of claim 1 , wherein the first bond wire is oriented in a first direction and the third bond wire is oriented in a second direction, the second direction being opposite to the first direction.
5. The semiconductor circuit of claim 4 , wherein at least a portion of the first bond wire is adjacent to the second bond wire.
6. The semiconductor circuit of claim 1 , further comprising a fourth bond wire coupled to the output of the amplifier.
7. The semiconductor circuit of claim 6 , wherein a first end of the fourth bond wire is coupled to a lead frame, and wherein a first end and a second end of the second bond wire are coupled to bond pads disposed on the semiconductor substrate.
8. The semiconductor circuit of claim 7 , further comprising an output matching network, wherein the output matching network comprises the second bond wire.
9. The semiconductor circuit of claim 1 , wherein the third bond wire further cancels an other mutual inductance present within the semiconductor circuit.
10. The semiconductor circuit of claim 1 , wherein the amplifier comprises a gain of at least 20 dB.
11. A semiconductor circuit comprising:
an amplifier disposed on a semiconductor substrate;
an input bond wire comprising a first end and a second end, the first end coupled to a lead frame, and the second end coupled to an input of the amplifier;
an output bond wire comprising a first end and a second end, the first end coupled to the lead frame, and the second end coupled to an output of the amplifier;
a matching network comprising a matching bond wire coupled to the output of the amplifier, wherein
the matching bond wire presents a mutual inductance to the input bond wire; and
a compensating bond wire coupled in series with the input bond wire to the input of the amplifier, wherein the compensating bond wire presents a mutual inductance to the matching bond wire with a polarity opposite the mutual inductance between the matching bond wire and the input bond wire, the compensating bond wire comprising a first end affixed to a first bonding pad disposed on the semiconductor substrate, and a second end affixed to a second bonding pad disposed on the semiconductor substrate.
12. The semiconductor circuit of claim 11 , wherein the matching bond wire comprises a first end affixed to a third bonding pad disposed on the semiconductor substrate, and a second end affixed to a fourth bonding pad disposed on the semiconductor substrate.
13. The semiconductor circuit of claim 12 , wherein lengths and bonding pad positions of the matching bond wire and the compensating bond wire are optimized to provide an output match and a stable amplifier.
14. The semiconductor circuit of claim 11 , wherein the matching network comprises a plurality of matching bond wires.
15. The semiconductor circuit of claim 11 , further comprising at least one further compensating bond wire.
16. A semiconductor circuit comprising:
an amplifier disposed on a semiconductor substrate;
a first bond wire coupled to an input of the amplifier;
a second bond wire coupled to an output of the amplifier, wherein the second bond wire comprises a first end coupled to a first bonding pad disposed on the semiconductor substrate and a second end coupled to a second bonding pad disposed on the semiconductor substrate;
a third bond wire coupled in series with the first bond wire, wherein a mutual inductance between the second bond wire and the third bond wire at least partially cancels a mutual inductance between the first bond wire and the second bond wire; and
a fourth bond wire comprising a first end coupled to a lead frame.
17. The semiconductor circuit of claim 16 , further comprising an output matching network, wherein the output matching network comprises the second bond wire.