Semiconductor light-emitting element and method for fabrication the same
The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle θ in the c-axis direction preferably satisfies −1°<θ<0°.
1. A semiconductor light-emitting element comprising a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween, wherein
the group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative.
2. The semiconductor light-emitting element according to claim 1 , wherein
an emission wavelength of the active layer is not less than 450 nm.
3. The semiconductor light-emitting element according to claim 1 or 2 , wherein
the offset angle θ in the c-axis direction satisfies −1°<θ<0° in the group III nitride semiconductor forming the group III nitride semiconductor multilayer structure.
4. A method of fabricating a semiconductor light-emitting element comprising a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween, the method comprising:
a step of forming the group III nitride semiconductor multilayer structure by growing a group III nitride semiconductor with a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative.
5. The method of fabricating a semiconductor light-emitting element according to claim 4 , wherein
an emission wavelength of the active layer is not less than 450 nm.
6. The method of fabricating a semiconductor light-emitting element according to claim 4 or 5 , wherein
the major surface is defined by an m-plane whose offset angle in the c-axis direction is negative.
7. The method of fabricating a semiconductor light-emitting element according to any one of claims 4 to 6 , wherein
the step of forming the group III nitride semiconductor multilayer structure includes a step of growing a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle θ in the c-axis direction satisfies −1°<θ<0°.
8. The method of fabricating a semiconductor light-emitting element according to any one of claims 4 to 7 , wherein
the step of forming the group III nitride semiconductor multilayer structure includes a step of growing the group III nitride semiconductor on a group III nitride semiconductor single-crystalline substrate having a major surface whose offset angle in the c-axis direction is negative.
9. The method of fabricating a semiconductor light-emitting element according to claim 8 , wherein
the group III nitride semiconductor single-crystalline substrate is a GaN substrate.