Semiconductor power module
Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.
1. A semiconductor power module formed by connecting a base substrate and a ceramic insulating substrate and a semiconductor chip to one another with solder,
wherein for soldering of the ceramic insulating substrate and the base substrate, lead-free solder comprised of Ag: 2 mass % to 4.5 mass %, Cu: 0 mass % to 2.0 mass %, In: 3 mass % to 7 mass %, and remainder of Sn is used.
2. The semiconductor power module according to claim 1 ,
wherein in the lead-free solder, at least one kind of Bi, Zn, Ge, Al, Ni and Sb is included.
3. The semiconductor power module according to claim 2 ,
wherein gel filler is filled into the semiconductor power module to cover portions of the said base substrate, said ceramic insulating substrate and said semiconductor chip, and epoxy resin is at least partially coated on a perimeter of an end portion of the solder connecting the ceramic insulating substrate and the base substrate, a perimeter of the ceramic insulating substrate and a part of a surface of the base substrate in such a manner as to wrap them.
4. The semiconductor power module according to claim 3 , wherein the gel filler comprises silicon gel.
5. The semiconductor power module according to claim 2 ,
wherein dimple groove work is applied to a part of the base substrate and an epoxy resin is coated on the part of the surface of the base substrate in such a manner as to wrap the dimple groove work.
6. The semiconductor power module according to claim 1 ,
wherein gel filler is filled into the semiconductor power module to cover portions of the said base substrate, said ceramic insulating substrate and said semiconductor chip, and epoxy resin is at least partially coated on a perimeter of an end portion of the solder connecting the ceramic insulating substrate and the base substrate, a perimeter of the ceramic insulating substrate and a part of a surface of the base substrate in such a manner as to wrap them.
7. The semiconductor power module according to claim 6 , wherein the gel filler comprises silicon gel.
8. The semiconductor power module according to claim 1 ,
wherein dimple groove work is applied to a part of the base substrate and an epoxy resin is coated on the part of the surface of the base substrate in such a manner as to wrap the dimple groove work.
9. The semiconductor power module according to claim 1 , wherein the base substrate is made of a metal-containing material.
10. The semiconductor power module according to claim 1 , wherein the base substrate is made of a copper-containing material.
11. The semiconductor power module according to claim 1 , wherein in said lead-free solder, the In is dissolved therein.
12. The semiconductor power module according to claim 1 , wherein the lead-free solder is a network of needle-shaped Ag 3 Sn, and the In is dissolved in the solder.
13. The semiconductor power module according to claim 1 , wherein the lead-free solder includes 0.5 to 0.8 mass % Cu.