Photo nanoimprint lithography

1. A photo nanoimprint lithography comprising the steps of:

discretely applying a photo-curable resist drop-wise onto a substrate;

filling a first asperity pattern of a mold with the photo-curable resist by bringing the mold having the first asperity pattern formed therein into contact with the photo-curable resist;

curing the photo-curable resist by irradiating the resist with a light;

releasing from the mold the photo-curable resist which has been photo-cured to form a second asperity pattern on the photo-curable resist, which has been photo-cured; and

forming an intermediary layer which has a larger interfacial tension than the surface tension of the photo-curable resist on a surface of the substrate and has a predetermined thickness before the step of discretely applying the photo-curable resist drop-wise onto the substrate,

wherein the thickness the intermediary layer is determined so as to be commensurate with the etching resistance of the resist and the thickness of a base layer, with the thickness of the base layer including the intermediary layer being half or less than a half of the height of the second asperity pattern of the photo-curable-resist,

wherein the intermediary layer is combined with the surface of the substrate through a chemical bond,

wherein a functional group to be combined with the surface of the substrate is a silane coupling group.

2. The photo nanoimprint lithography according to claim 1 , wherein the intermediary layer has an organic compound containing at least one functional group which forms bonding with the resist through a chemical bond.

3. A photo nanoimprint lithography comprising the steps of:

discretely applying a photo-curable resist drop-wise onto a substrate;

filling first asperity pattern of a mold with the photo-curable resist by bringing the mold having the first asperity pattern formed therein into contact with the photo-curable resist;

curing the photo-curable resist by irradiating the resist with a light;

releasing from the mold, the photo-curable resist which has been photo-cured to form a second asperity pattern on the photo-curable resist, which has been photo-cured; and

forming an intermediary layer which has a larger contact angle against water than that of the substrate and has a predetermined thickness before the step of discretely applying the photo-curable resist drop-wise onto the substrate,

wherein the thickness the intermediary layer is determined so as to be commensurate with the etching resistance of the resist and the thickness of a base layer, with the thickness of a base layer including the intermediary layer being half or less than a half of the height of the second asperity pattern of the photo-curable resist,

wherein the intermediary layer comprises a silane coupling agent shown by the following general formula 1:

Y n SiX(4 −n )  (General formula 1),

wherein Y represents an alkyl group, a fluoroalkyl croup, a vinyl group, an amino group, phenyl group, a chloroalkyl group, an isocyanate group, or an epoxy group or an organic group comprising them; X represents an alkoxyl group, an acetyl group or a halogen; and n is an integer of 0 to 3.

4. The photo nanoimprint lithography according to claim 3 , wherein the intermediary layer has a larger interfacial tension than the surface tension of the photo-curable resist.

5. The photo nanoimprint lithography according to claim 3 , wherein the intermediary layer is combined with the surface of the substrate through a chemical bond.

6. The photo nanoimprint lithography according to claim 3 , wherein the intermediary layer has an organic compound containing at least one functional group which forms bonding with the resist through a chemical bond.

7. The photo nanoimprint lithography according to claim 3 , wherein the step of discretely applying the photo-curable resist drop-wise includes disposing the droplet of the photo-curable resist on a surface of the intermediary layer by an ink-jet technique.

8. The photo nanoimprint lithography according to claim 7 , wherein an amount of the droplet discharged by an ink-jet technique in the step of disposing the droplets of the photo-curable resist on the surface of the intermediary layer by the ink-jet technique is 0.005 pl or more but 100 pl or less per one droplet, and a center-to-center distance between the droplets disposed on the surface of the intermediary layer by the ink-jet technique is longer than a length in a longitudinal direction of the droplet.

9. The photo nanoimprint lithography according to claim 3 , wherein a thickness of the intermediary layer is a half or less of a height of the asperity pattern.

10. The photo nanoimprint lithography according to claim 1 , wherein the intermediary layer is a non-etched layer.

11. The photo nanoimprint lithography according to claim 3 , wherein the intermediary layer is a non-etched layer.