IP Library Granted Patent US 8,152,980
Granted Patent B2
US 8,152,980 · App. 11/861,941 · Granted Apr 10, 2012

Electronically conducting ceramic electron conductor material and the process for producing an air-tight seal in an oxygen sensor with an internal reference

Assignee: UChicago Argonne, LLC
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Quick Facts
Patent No.
US 8,152,980
App. No.
11/861,941
Granted
Apr 10, 2012
Kind
B2
Abstract

A method and an article of an electrically conductive ceramic interconnect bonded to a compatible ceramic housing for an oxygen partial pressure sensor system. The interconnect includes a La x Sr y Al z Mn 1−z O 3 (LSAM) having a stoichiometry enabling good electrical conductivity at high temperatures and the LSAM also bonded to a yttria stabilized zirconia forming a stable and durable seal.

Claims (11)

1. A high temperature potentiometric industrial sensor comprising:

a first platinum electrode coupled to a top surface of a first yttria stabilized tetragonal zirconia (YTZP) electrolyte wafer;

a second platinum electrode having a distal side externally disposed relative to a sealed chamber and a proximal side internally disposed relative to the sealed chamber;

said sealed chamber comprising: a housing having a seal layer enclosing an internal reference material within the sealed chamber and forming a single chamber containing the internal reference material, the housing including said first platinum electrode disposed on the distal side to a bottom surface of said first yttria stabilized tetragonal zirconia (YTZP) electrolyte wafer, a cylindrical ring-like La x Sr y Al z Mn 1−z O 3 (LSAM) electronically conductive electrode layer whose stoichiometry ranges from x+y≦1 and 0.3≦z≦0.9 and is further coupled to the second platinum electrode wherein said second platinum electrode spans a gap of the cylindrical ring-like LSAM electrode layer, a second yttria stabilized tetragonal zirconia (YTZP) solid, cylindrical ring-like component coupled to the LSAM electrode layer and a third YTZP base layer coupled to said second YTZP cylindrical ring-like layer by a bond layer.

2. The high temperature potentiometric industrial sensor as defined in claim 1 wherein the ring-like LSAM conductive electrode layer consists essentially of a single phase of La, Sr, Al, Mn and O.

3. The high temperature potentiometric industrial sensor as defined in claim 1 wherein the ring-like LSAM conductive electrode layer consists of La, Sr, Al, Mn and O without any Zr.

4. The high temperature potentiometric industrial sensor as defined in claim 1 wherein the internal reference material consists essentially of a metal and metal oxide.

5. The high temperature potentiometric industrial sensor as defined in claim 1 wherein the ring-like LSAM conductive electrode layer and the second YTZP solid, cylindrical ring-like layer have substantially similar deformation characteristics and thermal expansion coefficients.

6. The high temperature potentiometric industrial sensor as defined in claim 1 wherein the seal layer is between about one micrometer and three millimeters in width.

7. The ceramic system interconnect as defined in claim 1 wherein the seal layer comprises a mechanical mixture of the LSAM electrode layer and material of the housing layer.

8. The high temperature potentiometric industrial sensor as defined in claim 1 further including a system for analyzing a signal received from the oxygen sensor for use in control of operating conditions of the industrial environment.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2009
From: SINGH, DILEEP; ROUTBORT, JULES
To: UCHICAGO ARGONNE, LLC
Reel/Frame 022489/0635 →
CONFIRMATORY LICENSE Recorded Sep 3, 2008
From: UCHICAGO ARGONNE, LLC
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 021477/0665 →
Continuity (1)
Related Publication 20090078025A1 · Mar 26, 2009